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C147S Datasheet(PDF) 1 Page - Digitron Semiconductors |
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C147S Datasheet(HTML) 1 Page - Digitron Semiconductors |
1 / 5 page DIGITRON SEMICONDUCTORS 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 C147A-C147PB HIGH POWER SILICON CONTROLLED RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Repetitive peak off-state voltage Repetitive peak reverse voltage Non-repetitive peak reverse voltage VDRM1 VRRM1 VRSM1 Part number TJ = -40° to 125°C TJ = -40°C to 125°C TJ = 125°C Units C147A 100 100 150 V C147B 200 200 300 V C147C 300 300 400 V C147D 400 400 500 V C147E 500 500 600 V C147M 600 600 720 V C147S 700 700 840 V C147N 800 800 960 V C147T 900 900 1080 V C147P 1000 1000 1200 V C147PA 1100 1100 1320 V C147PB 1200 1200 1440 V 1: Pulse width: half sine wave waveform, 10 msec. Rating Symbol Value Unit RMS on-state current (All conduction angles) IT(RMS) 63 A Average on-state current IT(AV) Figures 2 and 3 Critical rate of rise of on-state current (non-repetitive) Switching from 1200V Switching from 600V di/dt 100 200 A/µs Peak one cycle surge (non-repetitive) on-state current 60Hz 50Hz ITSM 1000 910 A Fusing Times ≥ 8.3ms Times ≥ 1.5ms I2t 4150 2850 A2s Peak gate power dissipation for 150µs PGM 100 W Average gate power dissipation PG(AV) 2 W Storage temperature Tstg -40 to 150 °C Operating temperature TJ -40 to 125 °C Maximum stud torque 3-4 N-m di/dt ratings for conditions of VDRM stated above; 20V, 20Ω gate trigger source with 0.5µsec short circuit trigger current rise time. sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20130116 |
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