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C147S Datasheet(PDF) 1 Page - Digitron Semiconductors

Part # C147S
Description  HIGH POWER SILICON CONTROLLED RECTIFIER
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Manufacturer  DIGITRON [Digitron Semiconductors]
Direct Link  http://www.digitroncorp.com
Logo DIGITRON - Digitron Semiconductors

C147S Datasheet(HTML) 1 Page - Digitron Semiconductors

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DIGITRON SEMICONDUCTORS
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
C147A-C147PB
HIGH POWER SILICON CONTROLLED RECTIFIER
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Repetitive peak off-state
voltage
Repetitive peak
reverse voltage
Non-repetitive peak
reverse voltage
VDRM1
VRRM1
VRSM1
Part number
TJ = -40° to 125°C
TJ = -40°C to
125°C
TJ = 125°C
Units
C147A
100
100
150
V
C147B
200
200
300
V
C147C
300
300
400
V
C147D
400
400
500
V
C147E
500
500
600
V
C147M
600
600
720
V
C147S
700
700
840
V
C147N
800
800
960
V
C147T
900
900
1080
V
C147P
1000
1000
1200
V
C147PA
1100
1100
1320
V
C147PB
1200
1200
1440
V
1: Pulse width: half sine wave waveform, 10 msec.
Rating
Symbol
Value
Unit
RMS on-state current
(All conduction angles)
IT(RMS)
63
A
Average on-state current
IT(AV)
Figures 2 and 3
Critical rate of rise of on-state current (non-repetitive)
Switching from 1200V
Switching from 600V
di/dt
100
200
A/µs
Peak one cycle surge (non-repetitive) on-state current
60Hz
50Hz
ITSM
1000
910
A
Fusing
Times ≥ 8.3ms
Times ≥ 1.5ms
I2t
4150
2850
A2s
Peak gate power dissipation for 150µs
PGM
100
W
Average gate power dissipation
PG(AV)
2
W
Storage temperature
Tstg
-40 to 150
°C
Operating temperature
TJ
-40 to 125
°C
Maximum stud torque
3-4
N-m
di/dt ratings for conditions of VDRM stated above; 20V, 20Ω gate trigger source with 0.5µsec short circuit trigger current rise time.
sales@digitroncorp.com
fax +1.908.245-0555
www.digitroncorp.com
Rev. 20130116


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