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2N3668 Datasheet(PDF) 1 Page - Digitron Semiconductors

Part # 2N3668
Description  12.5A SILICON CONTROLLED RECTIFIER
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Manufacturer  DIGITRON [Digitron Semiconductors]
Direct Link  http://www.digitroncorp.com
Logo DIGITRON - Digitron Semiconductors

2N3668 Datasheet(HTML) 1 Page - Digitron Semiconductors

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DIGITRON SEMICONDUCTORS
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130108
2N3668-2N3670, 2N4103
12.5A SILICON CONTROLLED RECTIFIER
MAXIMUM RATINGS
Rating
Symbol
2N3668
2N3669
2N3670
2N4103
Units
Non-repetitive peak reverse voltage
VRM
150
330
660
700
V
Peak repetitive reverse voltage
VRRM
100
200
400
600
V
Peak forward blocking voltage
VFBOM
100
200
400
600
V
Forward current for case temperature TC = +80°C
@ average DC value at a conduction angle of 180°
RMS value
IFAV
IFRMS
8
12.5
A
Peak surge current for one cycle of applied voltage
60 Hz (sinusoidal), TC = 80°C
50 Hz (sinusoidal), TC = 80°C
IFM
200
200
170
A
Fusing current
(TJ = -40 to +100°C, t = 1 to 8.3ms)
I2t
170
A2s
Rate of change of forward current
VFB = VBOO, IGT = 200mA, 0.5ns rise time
di/dt
200
A/µs
Peak gate power for 10ns duration
PGM
40
W
Average gate power
PGAV
0.5
W
Storage temperature
Tstg
-40 to +125
°C
Operating case temperature
TC
-40 to +100
°C
*Any values of peak gate current or peak gate voltage to give the maximum gate power is permissible.
* Temperature reference point is within 1/8” of the center of the underside of unit.
ELECTRICAL CHARACTERISTICS @ maximum ratings and indicated case temperature (TC)
2N3668
2N3669
2N3670
2N4103
Characteristic
Symbol
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Units
Peak repetitive blocking voltage
@ TC = 100°C
VDROM
100
-
-
200
-
-
400
-
-
600
-
-
V
Forward peak blocking current
@TC = 100°C, VD = VDROM
IDOM
-
0.2
2
-
0.25
2.5
-
0.3
3
-
0.35
4
mA
Reverse peak blocking current
@ TC = 100°C, VR = VRROM
IROM
-
0.05
1
-
0.1
1.25
-
0.2
1.5
-
0.3
3
mA
Forward voltage drop @ 25A
TC = 25°C
VF
-
1.5
1.8
-
1.5
1.8
-
1.5
1.8
-
1.5
1.8
V
DC gate-trigger current
@ TC = 25°C
IGT
1
20
40
1
20
40
1
20
40
1
20
40
mA
DC gate-trigger voltage
@ TC = 25°C
VGT
-
1.5
2
-
1.5
2
-
1.5
2
-
1.5
2
V
Holding current @ TC = 25°C
IH
0.5
25
50
0.5
25
50
0.5
25
50
0.5
25
50
mA
Critical rate of forward voltage
VF = VBOO, exponential rise
TC = 100°C
dv/dt
10
100
-
10
100
-
10
100
-
10
100
-
V/µs
Turn-on time
(delay time + rise time)
VD = VDROM, IT = 8A, IG = 200mA,
0.1µs rise time, TC = 25°C
ton
-
1.25
-
-
1.25
-
-
1.25
-
-
1.25
-
µs
Turn-off time
(reverse recovery time + gate
recovery time)
IF = 8A, 50ns pulse width,
dvFS/dt = 20V/µs,
dir/dt = 30A/µs, IGT = 200mA,
TC = 80°C
toff
-
20
50
-
20
50
-
20
50
-
20
50
µs
Thermal resistance
Junction to case
R
ӨJC
-
-
1.7
-
-
1.7
-
-
1.7
-
-
1.7
°C/W


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