Electronic Components Datasheet Search |
|
2N3668 Datasheet(PDF) 1 Page - Digitron Semiconductors |
|
2N3668 Datasheet(HTML) 1 Page - Digitron Semiconductors |
1 / 3 page DIGITRON SEMICONDUCTORS 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com Rev. 20130108 2N3668-2N3670, 2N4103 12.5A SILICON CONTROLLED RECTIFIER MAXIMUM RATINGS Rating Symbol 2N3668 2N3669 2N3670 2N4103 Units Non-repetitive peak reverse voltage VRM 150 330 660 700 V Peak repetitive reverse voltage VRRM 100 200 400 600 V Peak forward blocking voltage VFBOM 100 200 400 600 V Forward current for case temperature TC = +80°C @ average DC value at a conduction angle of 180° RMS value IFAV IFRMS 8 12.5 A Peak surge current for one cycle of applied voltage 60 Hz (sinusoidal), TC = 80°C 50 Hz (sinusoidal), TC = 80°C IFM 200 200 170 A Fusing current (TJ = -40 to +100°C, t = 1 to 8.3ms) I2t 170 A2s Rate of change of forward current VFB = VBOO, IGT = 200mA, 0.5ns rise time di/dt 200 A/µs Peak gate power for 10ns duration PGM 40 W Average gate power PGAV 0.5 W Storage temperature Tstg -40 to +125 °C Operating case temperature TC -40 to +100 °C *Any values of peak gate current or peak gate voltage to give the maximum gate power is permissible. * Temperature reference point is within 1/8” of the center of the underside of unit. ELECTRICAL CHARACTERISTICS @ maximum ratings and indicated case temperature (TC) 2N3668 2N3669 2N3670 2N4103 Characteristic Symbol Min Typ Max Min Typ Max Min Typ Max Min Typ Max Units Peak repetitive blocking voltage @ TC = 100°C VDROM 100 - - 200 - - 400 - - 600 - - V Forward peak blocking current @TC = 100°C, VD = VDROM IDOM - 0.2 2 - 0.25 2.5 - 0.3 3 - 0.35 4 mA Reverse peak blocking current @ TC = 100°C, VR = VRROM IROM - 0.05 1 - 0.1 1.25 - 0.2 1.5 - 0.3 3 mA Forward voltage drop @ 25A TC = 25°C VF - 1.5 1.8 - 1.5 1.8 - 1.5 1.8 - 1.5 1.8 V DC gate-trigger current @ TC = 25°C IGT 1 20 40 1 20 40 1 20 40 1 20 40 mA DC gate-trigger voltage @ TC = 25°C VGT - 1.5 2 - 1.5 2 - 1.5 2 - 1.5 2 V Holding current @ TC = 25°C IH 0.5 25 50 0.5 25 50 0.5 25 50 0.5 25 50 mA Critical rate of forward voltage VF = VBOO, exponential rise TC = 100°C dv/dt 10 100 - 10 100 - 10 100 - 10 100 - V/µs Turn-on time (delay time + rise time) VD = VDROM, IT = 8A, IG = 200mA, 0.1µs rise time, TC = 25°C ton - 1.25 - - 1.25 - - 1.25 - - 1.25 - µs Turn-off time (reverse recovery time + gate recovery time) IF = 8A, 50ns pulse width, dvFS/dt = 20V/µs, dir/dt = 30A/µs, IGT = 200mA, TC = 80°C toff - 20 50 - 20 50 - 20 50 - 20 50 µs Thermal resistance Junction to case R ӨJC - - 1.7 - - 1.7 - - 1.7 - - 1.7 °C/W |
Similar Part No. - 2N3668 |
|
Similar Description - 2N3668 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |