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2N3029 Datasheet(PDF) 1 Page - Digitron Semiconductors |
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2N3029 Datasheet(HTML) 1 Page - Digitron Semiconductors |
1 / 7 page DIGITRON SEMICONDUCTORS 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 2N3027-2N3032 0.5 AMP SILICON CONTROLLED RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Characteristic Symbol 2N3027 2N3030 2N3028 2N3031 2N3029 2N3032 Repetitive peak off-state voltage VDRM 30V 60V 100V Repetitive peak reverse voltage VRRM 30V 60V 100V DC on-state current 100°C case 75°C ambient IT 500mA 250mA Repetitive peak on-state current ITRM 30A Surge (non-repetitive) on-state current 50ms 8ms ITSM 5A 8A Peak gate current IGM 250mA Average gate current IG(AV) 25mA Reverse gate voltage VGR 5V Reverse gate current IGR 3mA Storage temperature range Tstg -65°C to +200°C Operating temperature range TJ -65°C to +150°C Blocking voltage ratings apply over the operating temperature range, provided the gate is connected to the cathode through an appropriate resistor, or adequate gate bias is used. ELECTRICAL CHARACTERISTIC (@ 25°C unless otherwise noted) (2N3027-2N3029) Parameter Symbol Min. Typ. Max. Unit Test Condition 25°C tests Off state current IDRM - 0.002 0.100 µA RGK = 1KΩ, VDRM = rating Reverse current IRRM - 0.002 0.100 µA RGK = 1KΩ, VRRM = rating Reverse gate voltage VGR 5 8 - V IGR = 0.1mA Gate trigger current IGT -5 8 200 µA RGS = 10KΩ, VD = 5V Gate trigger voltage VGT 0.400 0.550 0.800 V RGS = 100Ω, VD = 5V On-state voltage VT 0.800 1.200 1.500 V IT = 1A (pulse test) Holding current IH 0.300 0.700 5.000 mA RGK = 1KΩ, VD = 5V Off-state voltage – critical rate of rise dv/dt 30 15 10 60 30 25 - - - V/µs RGK = 1KΩ, VD = 30V (2N3027) RGK = 1KΩ, VD = 60V (2N3028) RGK = 1KΩ, VD = 100V (2N3029) Gate trigger-on pulse width tpg(on) - 0.070 0.200 µs IG = 10mA, IT = 1A, VD = 30V Delay time td - 0.080 - µs IG = 10mA, IT = 1A, VD = 30V Rise time tr - 0.040 - µs IG = 10mA, IT = 1A, VD = 30V Circuit commutated turn-off time tg - 0.700 2.000 µs IT = 1A, IR = 1A, RGK = 1KΩ 150°C Tests High temperature off-state current IDRM - 2 20 µA RGK = 1KΩ, VDRM = rating High temperature reverse current IRRM - 20 50 µA RGK = 1KΩ, VRRM = rating High temperature gate trigger voltage VGT 0.100 0.150 0.600 V RGS = 100Ω, VD = 5V High temperature holding current IH 0.050 0.200 1.000 mA RGK = 1KΩ, VD = 5V -65°C Tests Low temperature gate trigger voltage VGT 0.600 0.750 1.100 V RGS = 100Ω, VD = 5V Low temperature gate trigger current IGT 0 150 1.200 mA RGS = 10KΩ, VD = 5V Low temperature holding current IH 0.500 3.500 10 mA RGK = 1KΩ, VD = 5V sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20130116 |
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