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2N3873 Datasheet(PDF) 1 Page - Digitron Semiconductors

Part # 2N3873
Description  SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING TRIODE THYRISTOR
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Manufacturer  DIGITRON [Digitron Semiconductors]
Direct Link  http://www.digitroncorp.com
Logo DIGITRON - Digitron Semiconductors

2N3873 Datasheet(HTML) 1 Page - Digitron Semiconductors

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DIGITRON SEMICONDUCTORS
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
2N3870-2N3873
SILICON CONTROLLED RECTIFIERS
2N3896-2N3899
REVERSE BLOCKING TRIODE THYRISTOR
2N6171-2N6174
35 AMPS RMS, 100-800 VOLTS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS (TC = 100°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak repetitive forward or reverse blocking voltage (1)
(TJ = -40 to 100°C, ½ sine wave, 50-400 Hz, gate open)
2N3870, 2N3896, 2N6171
2N3871, 2N3897, 2N6172
2N3872, 2N3898, 2N6173
2N3873, 2N3899, 2N6174
VRRM or VDRM
100
200
400
600
Volts
Peak non-repetitive forward or reverse blocking voltage
(t ≤ 5ms)
2N3870, 2N3896, 2N6171
2N3871, 2N3897, 2N6172
2N3872, 2N3898, 2N6173
2N3873, 2N3899, 2N6174
VRSM or VDSM
150
330
660
700
Volts
Average on-state current (2)
(TC = -40 to 65°C)
(TC = 85°C)
IT(AV)
22
11
Amps
Peak non-repetitive surge current
(one cycle, 60Hz) (TC = 65°C)
ITSM
350
Amps
Circuit fusing
(TC = -40 to 100°C)
(t = 1 to 8.3 ms)
I2t
510
A2s
Peak gate power
PGM
20
Watts
Average gate power
PG(AV)
0.5
Watt
Peak forward gate current
IGM
2
Amps
Peak gate voltage
VGM
10
Volts
Operating junction temperature range
TJ
-40 to 100
°C
Storage temperature range
Tstg
-40 to 150
°C
Stud torque
-
30
In. lb.
Thermal resistance, junction to case
2N3870 – 2N3873, 2N3896-2N3899
2N6171-2N6174
R
ӨJC
0.9
1
°C/W
Note 1: Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode. Devices
should not be tested with a constant current source for forward or reverse blocking capability such that the voltage applied exceeds the rated blocking voltage.
Note 2: Isolated stud devices must be derated an additional 10 percent.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Peak forward or reverse blocking current
(Rated VDRM or VRRM, gate open, TJ = 100°C)
2N3870, 2N3896, 2N6171
2N3871, 2N3897, 2N6172
2N3872, 2N3898, 2N6173
2N3873, 2N3899, 2N6174
Rated VDRM or VRRM, gate open, TJ = 25°C)
All devices
IDRM, IRRM
-
-
-
-
-
1
1
1
1
-
2.0
2.5
3.0
4.0
10
mA
µA
sales@digitroncorp.com
fax +1.908.245-0555
www.digitroncorp.com
Rev. 20130116


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