BCR1AM-14A

Preliminary

R07DS1076EJ0200 Rev.1.00

Page 2 of 6

Apr 03, 2014

Electrical Characteristics

Parameter

Symbol

BCR1AM-14A-1

BCR1AM-14A

Unit

Test conditions

Min.

Typ.

Max.

Min.

Typ.

Max.

Repetitive peak off-state current

—

—

0.5

—

—

0.5

mA

Tj = 125

°C

On-state voltage

—

—

1.6

—

—

1.6

V

Tc = 25

instantaneous

measurement

Gate trigger voltage

Note2

I

—

—

2.0

—

—

2.0

V

Tj = 25

II

—

—

2.0

—

—

2.0

V

III

—

—

2.0

—

—

2.0

V

IV

—

—

2.0

—

—

2.0

V

Gate trigger curent

Note2

I

—

—

5

—

—

5

mA

Tj = 25

II

—

—

3

—

—

5

mA

III

—

—

3

—

—

5

mA

IV

—

—

10

—

—

10

mA

Gate non-trigger voltage

0.1

—

—

0.1

—

—

V

Tj = 125

°C

Thermal resistance

—

—

50

—

—

50

°C/W Junction to case

Note3

Critical-rate of rise of off-state

commutating voltage

Note4

(dv/dt)c

1.0

—

—

2.0

—

—

V/

μs Tj = 125°C

Notes: 2. Measurement using the gate trigger characteristics measurement circuit.

3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case.

4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

Test conditions

Commutating voltage and current waveforms

(inductive load)

1. Junction temperature

Tj = 125

°C

2. Rate of decay of on-state commutating current

(di/dt)c = – 0.5 A/ms

3. Peak off-state voltage

Supply Voltage

Time

Time

Time

Main Current

Main Voltage

(di/dt)c

(dv/dt)c