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BCR1AM14A Datasheet(PDF) 2 Page - Renesas Technology Corp |
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BCR1AM14A Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 7 page BCR1AM-14A Preliminary R07DS1076EJ0200 Rev.1.00 Page 2 of 6 Apr 03, 2014 Electrical Characteristics Parameter Symbol BCR1AM-14A-1 (IGT item : 1) BCR1AM-14A Unit Test conditions Min. Typ. Max. Min. Typ. Max. Repetitive peak off-state current IDRM — — 0.5 — — 0.5 mA Tj = 125 °C VDRM applied On-state voltage VTM — — 1.6 — — 1.6 V Tc = 25 °C, ITM = 1.5 A instantaneous measurement Gate trigger voltage Note2 I VFGTΙ — — 2.0 — — 2.0 V Tj = 25 °C, VD = 6 V RL = 6 Ω, RG = 330 Ω II VRGTΙ — — 2.0 — — 2.0 V III VRGTΙΙΙ — — 2.0 — — 2.0 V IV VFGTΙΙΙ — — 2.0 — — 2.0 V Gate trigger curent Note2 I IFGTΙ — — 5 — — 5 mA Tj = 25 °C, VD = 6 V RL = 6 Ω, RG = 330 Ω II IRGTΙ — — 3 — — 5 mA III IRGTΙΙΙ — — 3 — — 5 mA IV IFGTΙΙΙ — — 10 — — 10 mA Gate non-trigger voltage VGD 0.1 — — 0.1 — — V Tj = 125 °C VD = 1/2 VDRM Thermal resistance Rth (j-c) — — 50 — — 50 °C/W Junction to case Note3 Critical-rate of rise of off-state commutating voltage Note4 (dv/dt)c 1.0 — — 2.0 — — V/ μs Tj = 125°C Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions Commutating voltage and current waveforms (inductive load) 1. Junction temperature Tj = 125 °C 2. Rate of decay of on-state commutating current (di/dt)c = – 0.5 A/ms 3. Peak off-state voltage VD = 400 V Supply Voltage Time Time Time Main Current Main Voltage (di/dt)c VD (dv/dt)c |
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