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HAT1091C Datasheet(PDF) 4 Page - Renesas Technology Corp |
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HAT1091C Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page HAT1091C R07DS1172EJ0500 Rev.5.00 Page 4 of 6 Mar 19, 2014 500 300 400 200 100 –25 0 25 50 75 100 125 150 0 –0.3 –3 –10 10 3 1 0.3 0.1 –0.1 –1 0 –20 1000 0 0 0 –10 -2 –20 -4 –30 -6 0.8 1.6 2.4 3.2 4 -8 100 1000 10 1 –0.01 –0.03 –0.1 –0.3 –1 –10 –3 300 100 30 10 Ciss Coss Crss –10 0 –0.4 –0.8 –1.2 –1.6 –2.0 –10 –4 –2 –6 –8 –2.5 V –0.8 A –0.5 A –5 V –10 V –40 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Case Temperature Tc ( °C) Drain Current ID (A) Gate Charge Qg (nC) Dynamic Input Characteristics Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Switching Characteristics Drain Current ID (A) Reverse Drain Current vs. Source to Drain Voltage Source to Drain Voltage VSD (V) Pulse Test VGS = 0, 10 V td(on) tf tr td(off) VGS = –4.5 V, VDD = –10 V RG = 4.7 Ω, Ta = 25°C VDD = –5 V –10 V –20 V VDD = –5 V –10 V –20 V VDS VGS ID = –1.5 A VGS = 0 f = 1 MHz Tc = –25 °C 25 °C 75 °C VDS = –10 V Pulse Test Pulse Test VGS = –4.5 V ID = –1.5, –0.5, –0.8 A ID = –1.5 A |
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