HAT1091C datasheet(4/7 Pages) RENESAS

Part #	HAT1091C

Description	Silicon P Channel MOS FET Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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4 / 7 page

HAT1091C

R07DS1172EJ0500 Rev.5.00

Page 4 of 6

Mar 19, 2014

500

300

400

200

100

–25

0

25

50

75

100 125

150

0

–0.3

–3

–10

10

3

1

0.3

0.1

–0.1

–1

0

–20

1000

0

–10

-2

–20

-4

–30

-6

0.8

1.6

2.4

3.2

4

-8

100

1000

10

1

–0.01 –0.03 –0.1 –0.3

–1

–10

–3

300

100

30

10

Ciss

Coss

Crss

–10

0

–0.4

–0.8

–1.2

–1.6

–2.0

–10

–4

–2

–6

–8

–2.5 V

–0.8 A

–0.5 A

–5 V

–10 V

–40

Static Drain to Source on State Resistance

vs. Temperature

Forward Transfer Admittance vs.

Drain Current

Case Temperature

Tc (

°C)

Drain Current

ID (A)

Gate Charge

Qg (nC)

Dynamic Input Characteristics

Typical Capacitance vs.

Drain to Source Voltage

VDS (V)

Switching Characteristics

Drain Current

ID (A)

Reverse Drain Current vs.

Source to Drain Voltage

VSD (V)

Pulse Test

VGS = 0, 10 V

td(on)

tf

tr

td(off)

VGS = –4.5 V, VDD = –10 V

RG = 4.7 Ω, Ta = 25°C

VDD = –5 V

–10 V

–20 V

VDD = –5 V

–10 V

–20 V

VDS

VGS

ID = –1.5 A

VGS = 0

f = 1 MHz

Tc = –25

°C

25

°C

75

°C

VDS = –10 V

Pulse Test

VGS = –4.5 V

ID = –1.5, –0.5, –0.8 A

ID = –1.5 A

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HAT1091C Datasheet(PDF) 4 Page - Renesas Technology Corp

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