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LMC6442AIMXNOPB Datasheet(PDF) 1 Page - National Semiconductor (TI) |
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LMC6442AIMXNOPB Datasheet(HTML) 1 Page - National Semiconductor (TI) |
1 / 24 page LMC6442 www.ti.com SNOS013E – SEPTEMBER 1997 – REVISED MARCH 2013 LMC6442 Dual Micropower Rail-to-Rail Output Single Supply Operational Amplifier Check for Samples: LMC6442 1 FEATURES DESCRIPTION The LMC6442 is ideal for battery powered systems, 2 • (Typical, VS = 2.2V) where very low supply current (less than one • Output Swing to Within 30 mV of Supply Rail microamp per amplifier) and Rail-to-Rail output swing • High Voltage Gain 103 dB is required. It is characterized for 2.2V to 10V operation, and at 2.2V supply, the LMC6442 is ideal • Gain Bandwidth Product 9.5 KHz for single (Li-Ion) or two cell (NiCad or alkaline) • Ensured for: 2.2V, 5V, 10V battery systems. • Low Supply Current 0.95 µA/Amplifier The LMC6442 is designed for battery powered • Input Voltage Range −0.3V to V+ -0.9V systems that require long service life through low • 2.1 µW/Amplifier Power Consumption supply current, such as smoke and gas detectors, and pager or personal communications systems. • Stable for AV ≥ +2 or AV ≤ −1 Operation from single supply is enhanced by the wide APPLICATIONS common mode input voltage range which includes the ground (or negative supply) for ground sensing • Portable Instruments applications. Very low (5 fA, typical) input bias current • Smoke/Gas/CO/Fire Detectors and near constant supply current over supply voltage • Pagers/Cell Phones enhance the LMC6442's performance near the end- of-life battery voltage. • Instrumentation • Thermostats Designed for closed loop gains of greater than plus two (or minus one), the amplifier has typically 9.5 • Occupancy Sensors KHz GBWP (Gain Bandwidth Product). Unity gain can • Cameras be used with a simple compensation circuit, which • Active Badges also allows capacitive loads of up to 300 pF to be driven, as described in the Application Information section. Connection Diagram Top View Figure 1. 8-Pin SOIC / PDIP Package See Package Numbers D0008A, P0008E These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Copyright © 1997–2013, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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