Alternative Device Available

SFH610A, SFH6106

www.vishay.com

Vishay Semiconductors

Rev. 2.2, 23-May-13

6

Document Number: 83666

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 5 - Diode Forward Voltage vs. Forward Current

Fig. 6 - Transistor Capacitance (typ.) vs. Collector Emitter Voltage

Fig. 7 - Permissible Pulse Handling Capability Forward Current vs.

Pulse Width

Fig. 8 - Permissible Power Dissipation vs. Temperature

Fig. 9 - Permissible Diode Forward Current vs.

Ambient Temperature

1.2

V

1.1

1.0

0.9

5 mA

55

isfh610a_05

VF = f (IF)

25 °C

50 °C

75 °C

0

5

10

15

20

pF

V

C

isfh610a_06

f = 1.0 MHz

mA

5

5

5

s

isfh610a_07

tp

I

F

T

T

D =

tp

D = 0

0.005

0.01

0.02

Pulse cycle

D = parameter

tp

I

F

0.05

0.1

0.2

0.5

DC

mA

0

30

60

90

120

0

50

100

75

25

°C

isfh610a_08

Ptot = f (TA)

mW

0

50

100

150

200

0

50

100

75

25

°C

isfh610a_09

Transistor

Diode