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MTN2N65I3 Datasheet(PDF) 5 Page - Cystech Electonics Corp. |
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MTN2N65I3 Datasheet(HTML) 5 Page - Cystech Electonics Corp. |
5 / 11 page CYStech Electronics Corp. Spec. No. : C722I3 Issued Date : 2009.08.14 Revised Date : 2011.11.10 Page No. : 5/11 MTN2N65I3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Reverse Voltage 1 10 100 1000 0 5 10 15 20 25 30 Drain-to-Source Voltage-VDS(V) Ciss Coss Crss f=1MHz Brekdown Voltage vs Ambient Temperature 600 650 700 750 800 850 -100 -50 0 50 100 150 200 Ambient Temperature-Tj(°C) ID=250μA, VGS=0V Maximum Safe Operating Area 0.01 0.1 1 10 1 10 100 1000 Drain-Source Voltage -VDS(V) Operation in this area is limited by RDS(ON) DC 10ms 100m 1ms 100μs 10μs Gate Charge Characteristics 0 2 4 6 8 10 12 02 46 8 10 Total Gate Charge---Qg(nC) ID=1.8A VDS=130V VDS=325V VDS=520V Maximum Drain Current vs Case Temperature 0 0.5 1 1.5 2 2.5 25 50 75 100 125 150 175 Case Temperature---TC(°C) |
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