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H11G2SM Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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H11G2SM Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com H11G1M, H11G2M, H11G3M Rev. 1.0.4 September 2009 H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers Features ■ High BVCEO – Minimum 100V for H11G1M – Minimum 80V for H11G2M – Minimum 55V for H11G3M ■ High sensitivity to low input current (Min. 500% CTR at IF = 1mA) ■ Low leakage current at elevated temperature (Max. 100µA at 80°C) ■ Underwriters Laboratory (UL) recognized File # E90700, Volume 2 ■ IEC 60747-5-2 approved (ordering option V) Applications ■ CMOS logic interface ■ Telephone ring detector ■ Low input TTL interface ■ Power supply isolation ■ Replace pulse transformer General Description The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an inte- gral base-emitter resistor to optimize elevated tempera- ture characteristics. Schematic Package Outlines EMITTER COLLECTOR 1 2 3 ANODE CATHODE 4 5 6 BASE N/C |
Similar Part No. - H11G2SM |
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Similar Description - H11G2SM |
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