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10PT Datasheet(PDF) 1 Page - Nell Semiconductor Co., Ltd |
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10PT Datasheet(HTML) 1 Page - Nell Semiconductor Co., Ltd |
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1 / 5 page  Page 1 of 5 SEMICONDUCTOR 10PT Series RoHS RoHS Stansard SCRs, 10A SYMBOL IT(RMS) RMS on-state current full sine wave ITSM Non repetitive surge peak on-state current (full cycle, T initial = 25°C) j A I t 2 2 I t Value for fusing 50 2 A s dI/dt Critical rate of rise of on-state current 50 IGM Peak gate current PG(AV) Average gate power dissipation Tstg Storage temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 ºC A/µs A A W UNIT VALUE 100 105 F =50 Hz F =60 Hz t = 20 ms t = 16.7 ms t = 10 ms p F = 60 Hz T =125ºC j T = 125ºC j T = 125ºC j T = 20 µs p Tj ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS Main Features Symbol Value Unit IT(RMS) V /V DRM RRM IGT 10 A V mA 15 600 to 1000 DESCRIPTION V 600 to 1000 T =125ºC j VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage (180° conduction angle ) 4 1 Average on-state current (180° conduction angle) IT(AV) A 1 2 3 1 2 3 2 2 2 1 2 3 TO-220AB (Non-lnsulated) TO-251 (I-PAK) TO-252 (D-PAK) I = 2xl , t ≤100ns G GT r 1 2 3 TO-220AB (lnsulated) (10PTxxF) (10PTxxG) (10PTxxA) (10PTxxAI) www.nellsemi.com TO-251/TO-252/TO-220AB TO-220AB insulated Tc=100°C Tc=90°C Maximum gate power PGM W 10 T =20µs p The 10PT series of silicon controlled rectifiers are high performance glass passivated technology, and are designed for power supply up to 400Hz on resistive or inductive load. T = 125ºC j TO-220AB insulated Tc=100°C Tc=90°C 6.4 10 TO-251/TO-252/TO-220AB 3(G) 1(K) 2(A) |
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