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8PTxxA Datasheet(PDF) 5 Page - Nell Semiconductor Co., Ltd |
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8PTxxA Datasheet(HTML) 5 Page - Nell Semiconductor Co., Ltd |
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5 / 7 page  SEMICONDUCTOR RoHS RoHS Page 5 of 7 8PT Series I (A) STM Fig.11 Surge peak on-state current versus number of cycles Fig.12 Non-repetitive surge peak on-state current and corresponding values of l²t www.nellsemi.com 0.01 0 200 400 1600 1.00 Fig.9 Relative variation of dV/dt immunity versus gate-cathode resistance 0 160 180 0.0 2.5 5.0 7.5 0.0 0.2 4.0 5.0 5.5 -20 0 60 20 -40 40 3.5 4.5 100 140 80 120 0.4 dV/dt[R ] / dV/dt[R =220Ω] GK GK 6.0 Fig.7 Relative variation of gate trigger and holding current versus junction temperature Fig.8 Relative variation of holding current versus gate-cathode resistance (typical values) dV/dt[C ] / dV/dt[R =220Ω] GK GK 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 1E-2 1E-1 1E+0 1E+1 600 800 1000 1200 1400 1800 2000 0.10 10.00 20 40 60 80 120 140 200 220 100 10.0 12.5 15.0 0.01 10 0 40 30 60 70 90 1 100 1000 20 50 10 80 100 0.10 1.00 10.00 10 100 1000 IH[RGK] / IH[RGK=1KΩ] I ,I ,I [Tj] / I ,I ,I [Tj=25 °C] GT H L GT H L 3.0 2.5 2.0 1.5 1.0 0.5 0.0 (typical values) for I =200µA G Fig.10 Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values) for I =200µA GT I (A),I²t(A²s) TSM IGT l & IL H T (°C) j 5mA & 15mA I =200µA GT T =25 °C j R (KΩ) GK Tj=125 °C V =0.67 X V D DRM R (KΩ) GK C (nF) GK V =0.67 X V D DRM Tj=125 °C R =220Ω GK t =10ms p One cycle Non repetitive T initial=25°C j Repetitive Tc=110°C Number of cycles t (ms) p I²t dI/dt Iimitation width tp< 10ms Sinusoidal pulse with ITSM Tj inital=25 °C |
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