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25PTxxAl Datasheet(PDF) 1 Page - Nell Semiconductor Co., Ltd |
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25PTxxAl Datasheet(HTML) 1 Page - Nell Semiconductor Co., Ltd |
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1 / 5 page  Page 1 of 5 SEMICONDUCTOR 25PT Series RoHS RoHS Stansard SCRs, 25A Main Features Symbol Value Unit IT(RMS) V /V DRM RRM IGT 25 A V mA 4 to 40 600 to 1200 DESCRIPTION 2 1 2 3 TO-220AB (Non-lnsulated) 1 2 3 TO-220AB (lnsulated) (25PTxxA) (25PTxxAI) www.nellsemi.com The 25PT series of silicon controlled rectifiers are high performance glass passivated technology, and are suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities. 2 TO-263 (D PAK) (25PTxxH) SYMBOL IT(RMS) RMS on-state current full sine wave ITSM Non repetitive surge peak on-state current (full cycle, T initial = 25°C) j A I t 2 2 I t Value for fusing 450 2 A s dI/dt Critical rate of rise of on-state current 50 IGM Peak gate current PG(AV) Average gate power dissipation Tstg Storage temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 ºC A/µs A A W UNIT VALUE 300 F =50 Hz F =60 Hz t = 20 ms t = 16.7 ms t = 10 ms p F = 60 Hz T =125ºC j T = 125ºC j T = 125ºC j T = 20 µs p Tj ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS V 600 to 1200 T =125ºC j VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage (180° conduction angle ) 4 1 Average on-state current (180° conduction angle) IT(AV) 16 A I = 2xl , t ≤100ns G GT r TO-263/TO-220AB TO-220AB insulated Tc=100°C Tc=83°C Maximum gate power PGM W 10 T =20µs p T = 125ºC j TO-263/TO-220AB TO-220AB insulated Tc=100°C Tc=83°C 25 314 A2 A2 G A1 3(G) 1(K) 2(A) |
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