SEMICONDUCTOR

RoHS

RoHS

Nell High Power Products

MAJOR RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise noted)

A

PARAMETER

V

V

SYMBOL

GBJ35..H

UNIT

1300

04

500

700

900

1200

400

600

800

1000

12

08

06

10

1100

1200

400

600

800

1000

V

Maximum repetitive peak reverse voltage

Peak reverse non-repetitive voltage

Maximum DC blocking voltage

Maximum average forward rectified output current, T = 85°C

c

Peak forward surge current single sine-wave superimposed on

rated load

Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)

for fusing

RMS isolation voltage from case to leads

Operating junction storage temperature range

2

I t

2500

664

35

400

2

A s

A

A

V

ºC

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

A

PARAMETER

V

µA

SYMBOL

GBJ35..H

UNIT

04

12

08

06

10

Maximum instantaneous forward drop per diode

Maximum reverse DC current at rated DC blocking

500

1.10

5

voltage per diod

TEST

CONDITIONS

I

= 17.5A

F

T

= 25°C

A

T

= 150°C

A

THERMAL AND MECHANICAL (T = 25°C unless otherwise noted)

A

PARAMETER

°C/W

SYMBOL

GBJ35..H

UNIT

04

12

08

06

10

Typical thermal resistance

(1) With heatsink, single side heat dissipation, half sine wave.

(1)

0.80

Notes

Storage temperature range

ºC

TEST CONDITIONS

junction to case

Single-side heat dissipation, sine

half wave

Mounting

± 10 %

to heatsink M3

A mounting compound is recommended

and the torque should be rechecked after

a

for the spread

period of 3 hours to allow

of the compound.

0.8

.

N m

Approximate weight

6.7

torque

g

-

Product type : “GBJ” Package,1

Ø Bridge

1

2

3

-

Device code

-

I

rating : "35" for 35A

F(AV)

Ordering Information Tabel

GBJ35H Series

GBJ

H

35

10

4

2

1

3

-

H: With Aluminum base plate (heatsink)

4

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