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2SB936L-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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2SB936L-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page 2SB936 Preliminary PNP EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R209-029.a ABSOLUTE MAXIMUM RATINGS (TC=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 V Collector Current IC -10 A Peak Collector Current ICP -20 A Collector Power Dissipation TC=25°C PC 40 W TA=25°C 1.3 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TC=25°C) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=-10mA, IE=0 -40 V Collector-Emitter Voltage BVCEO IC=-10mA, IB=0 -20 V Emitter-Base Breakdown Voltage BVEBO IC=-10mA, IC=0 -5 V Collector Cut-Off Current ICBO VCB=-40V, IE=0 -50 µA Emitter Cut-Off Current IEBO VEB=-5V, IC=0 -50 µA DC Current Gain hFE1 VCE=-2V, IC=-0.1A 45 hFE2 VCE=-2V, IC=-3 A 90 Collector-Emitter Saturation Voltage VCE(sat) IC=-10A, IB=-0.33A -0.6 V Base-Emitter Saturation Voltage VBE(sat) IC=-10A, IB=-0.33A -1.5 V Transition Frequency fT VCE=-10V, f=10MHz, IC=-0.5A 100 MHz Output Capacitance Cob VCB=-10V, f=1MHz, IE=0 400 pF Turn-On Time ton IC=-3A, IB1=-0.1A, IB2=0.1A 0.1 μs Storage Time ts 0.5 μs Fall Time tr 0.1 μs |
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