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10N15L-TF1-T Datasheet(PDF) 2 Page - Unisonic Technologies

Part # 10N15L-TF1-T
Description  10A, 150V, 0.3廓, N-CHANNEL POWER MOSFETS
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

10N15L-TF1-T Datasheet(HTML) 2 Page - Unisonic Technologies

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MJE13003-E
NPN EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 8
www.unisonic.com.tw
QW-R223-009.A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCEO(SUS)
400
V
Collector-Emitter Voltage
VCEV
700
V
Emitter Base Voltage
VEBO
9
V
Collector Current
Continuous
IC
1.5
A
Peak (1)
ICM
3
Base Current
Continuous
IB
0.75
A
Peak (1)
IBM
1.5
Emitter Current
Continuous
IE
2.25
A
Peak (1)
IEM
4.5
Total Power Dissipation
TA=25°C
TO-92
PD
1.0
Watts
MW/°C
TO-126S
1.4
Derate
above 25°C
TO-92
8
TO-126S
11.2
TC=25°C
TO-92
5
Watts
MW/°C
TO-126S
40
Derate
above 25°C
TO-92
40
TO-126S
320
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-65 to +150
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Case
TO-92
θJC
25
°C/W
TO-126S
3.12
Junction to Ambient
TO-92
θJA
122
°C/W
TO-126S
89
Maximum Load Temperature for Soldering Purposes:
1/8” from Case for 5 Seconds
TL
275
°C
Note: 1. Pulse Test : Pulse Width=5ms,Duty Cycle≤10%
2. Designer 's Data for “Worst Case” Conditions – The Designer 's Data Sheet permits the design of most
circuits entirely from the information presented. SOA Limit curves – representing boundaries on device
characteristics – are given to facilitate “Worst case” design.


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