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13003BSL-T92-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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13003BSL-T92-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page 13003BS Preliminary NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R223-018. a ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 450 V Emitter-Base Voltage VEBO 9 V Collector Current Continuous IC 2 A Peak ICM 4 A Base Current Continuous IB 1 A Peak IBM 2 A Power Dissipation (TC=25 °C) TO-251 PD 10 W TO-126 20 W TO-92 1 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-251 θJA 90 °C/W TO-126 100 TO-92 150 Junction to Case TO-251 θJC 12.5 °C/W TO-126 7.5 TO-92 100 ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=1mA, IE=0 800 V Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 450 V Emitter-Base Breakdown Voltage BVEBO IE=1mA, IC=0 9 V Collector Cut-Off Current ICBO VCB=800V, IE=0 0.1 mA Collector-Emitter Cut-Off Current ICEO VCE=450V, IB=0 0.1 mA Emitter-Base Cut-Off Current IEBO VEB=9V, IC=0 0.1 mA DC Current Gain (Note) hFE VCE=5V, IC=0.2mA 20 35 Low current and high current hFE2 hFE1 ratio hFE1/ hFE2 hFE1: VCE=5V, IC=5mA 0.75 hFE2: VCE=5V, IC=0.2A Collector-Emitter Saturation Voltage (Note) VCE(SAT) IC=0.5A, IB=0.1A 0.8 V Base-Emitter Saturation Voltage (Note) VBE(SAT) IC=0.5A, IB=0.1A 1.5 V Storage Time tS UI9600, IC=0.25A 2 5 μs Rise Time tR 2 μs Fall Time tF 2 μs Transition Frequency fT VCE=10V, IC=0.1A, f=1MHz 5 MHz Note: Pulse test, pulse width tp≤300µs, Duty cycle≤2%. |
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