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KTD863L-O-T9N-B Datasheet(PDF) 2 Page - Unisonic Technologies

Part No. KTD863L-O-T9N-B
Description  TRIPLE DIFFUSED NPN TRANSISTOR
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Maker  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
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KTD863
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R211-020.a
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
5
V
Continuous Collector Current
DC
IC
1
A
Pulse
ICP
2
A
Collector Power Dissipation
PC
1
W
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
ELECTRICAL CHARACTERISTICS (TA=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Emitter Breakdown Voltage
BVCEO
IC=1mA, IB=0
60
V
Collector Cut-Off Current
ICBO
VCB=50V, IE=0
1
µA
Emitter Cut-Off Current
IEBO
VEB=4V, IC=0
1
μA
Collector-Emitter Saturation Voltage
VCE(sat)
IC=500mA, IB=50mA
0.15 0.5
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=500mA, IB=50mA
0.85 1.2
V
DC Current Gain
hFE1
IC=50mA,VCE=2V
60
320
hFE2
IC=1A,VCE=2V
30
Transition Frequency
fT
IC=50mA, VCE=10V
150
MHz
Collector Output Capacitance
Cob
VCB=10V, f=1MHz, IE=0
12
pF
CLASSIFICATION OF hFE1
RANK
O
Y
GR
RANGE
60~120
100~200
160~320




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