MJE13003-E

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

6 of 8

www.unisonic.com.tw

QW-R223-009.A

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a transistor: average junction temperature and second

break-down. Safe operating area curves indicate Ic – VCE limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on Tc=25°C; TJ(pk) is variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated when Tc 25

≧

°C. Second breakdown limitations do not

derate the same as thermal limitations. Allowable current at the voltages shown on Figure 5 may be found at any case

tem-perature by using the appropriate curve on Figure 7.

power that can be handled to values less than the limitations imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases,

with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe

level at or below a specific value of collector current. This can be accomplished by several means such as active

clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe

Operating Area and represents the voltage–current conditions during re-verse biased turn–off. This rating is verified

under clamped conditions so that the device is never subjected to an ava-lanche mode. Figure 6 gives RBSOA

characteristics.

5

Fig 5. Active Region Safe Operating Area

10

500

10

5

0.5

0.2

0.01

20

50

100

200

300

2

1

0.1

0.05

0.02

THERMAL LIMIT (SINGLE PULSE)

BONDING WIRE LIMIT

SECOND BREAKDOWN LIMIT

CURVES APPLY BELOW RATED VCEO

10µS

100µS

1.0ms

5.0ms

dc

Tc=25?

Fig 6. Reverse Bias Safe Operating Area

1.6

1.2

0.8

0

VCEV,COLLECTOR-EMITTER LAMP VOLTAGE(VOLTS)

0.4

0

100

800

200

400

30

0

500

600

700

Tj? 100?

5V

3V

1.5V

20

Fig 7. Forward Bias Power Derating

40

60

160

1

0.8

0.

6

0.4

0.2

0

80

100

120

IC, CASE TEMPERATURE (? )

140

SECOND BREAKDOWN

DERATING

THERMAL

DERATING