SEMICONDUCTOR

RoHS

RoHS

Nell High Power Products

www.nellsemi.com

Page 2 of 8

7N90 Series

UNIT

MIN.

0.5

3.1

THERMAL RESISTANCE

PARAMETER

Thermal resistance, junction to case

SYMBOL

TYP.

MAX.

ºC/W

62.5

Thermal resistance, junction to ambient

UNIT

V

ns

μA

pF

nC

55

MAX.

100

900

-100

100

0.96

1440

17

35

80

95

140

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

C

I = 250μA,

D

V

= 0V

GS

TEST CONDITIONS

I = 250μA,

D

V

=V

DS

GS

V

=900V, V

=0V

DS

GS

T =25°C

C

Fall time

Gate to source reverse leakage current

Input capacitance

Total gate charge

Output capacitance

PARAMETER

Rise time

Gate to source forward leakage current

Turn-on delay time

Reverse transfer capacitance

Breakdown voltage temperature coefficient

Drain to source breakdown voltage

Turn-off delay time

SYMBOL

▲

▲

V

/

(BR)DSS

8.5

Gate to source charge

Drain to source leakage current

V/ºC

Ω

nA

T =125°C

C

TYP.

MIN.

10

52

V

=450V,

DD

(Note1,2)

V

=10V

GS

I =7A, R

=25Ω

D

GS

V

=25V, V

=0V, f=1MHz

DS

GS

V

= -30V, V

= 0V

GS

DS

V

= 30V, V

= 0V

GS

DS

V

=720V, V

=0V

DS

GS

OFF CHARACTERISTICS

ON CHARACTERISTICS

DYNAMIC CHARACTERISTICS

1880

185

23

SWITCHING CHARACTERISTICS

120

80

170

200

40

V

= 720V,

DD

(Note1,2)

V

=10V

GS

I =7A,

D

1.5

Static drain to source on-state resistance

1.8

V

=10V, l =3.5A

GS

D

3

V

Gate threshold voltage

5

Gate to drain charge (Miller charge)

20

TO-220AB

TO-220F

TO-220AB

TO-220F

62.5

S

V

=V

, I =250μA

GS

DS

D

5.7

V

=50V, I =3.5A

DS

D

Forward transconductance

SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise specified)

C

SYMBOL

PARAMETER

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Diode forward voltage

I

= 7A, V

= 0V

SD

GS

1.4

V

Continuous source to drain current

Integral reverse P-N junction

diode in the MOSFET

7

D (Drain)

G

(Gate)

S (Source)

A

Pulsed source current

28

Reverse recovery time

400

ns

I

= 7A, V

= 0V,

SD

GS

dI /dt = 100A/µs

F

Reverse recovery charge

4.3

μC

Note:

TO-220F