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IRF13N50 Datasheet(PDF) 4 Page - Nell Semiconductor Co., Ltd |
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IRF13N50 Datasheet(HTML) 4 Page - Nell Semiconductor Co., Ltd |
4 / 7 page SEMICONDUCTOR Nell High Power Products RoHS RoHS Fig.5 Typical capacitance vs. Drain-to-Source voltage Drain-to-Source voltage , VDS (V) Source-to-drain voltage, VSD (V) Fig.8 Maximum safe operating area Drain-to-Source voltage, VDS (V) Case temperature, T (°C) C Fig.7 Typical gate charge vs. gate-to-source voltage Total gate charge , QG (nC) Fig.6 Typical source-drain diode forward voltage Fig.9 Maximum drain current vs. Case temperature 5 12 1000 100 10 0 0 12 24 36 48 7 2 0 10 1 100 1000 15 12 9 6 3 0 25 50 75 100 125 150 0.5 0.2 1.1 1.4 0.8 60 10 10 0.1 1 10 10² 10³ www.nellsemi.com Page 4 of 7 10000 100000 IRF13N50 Series C = ( ) iss C +C C = shorted gs gd ds C = C rss gd C = C +C oss ds gd V = 0V, GS f =1MHZ 1000 100 Crss Coss Ciss 100 10 1 0.1 T = 25°C J T = 150°C J V = 0V GS V = 400V DS V = 250V DS V = 100V DS l = 14A D Operation in This Area is Limited by RDS(ON) 1mssx 100µs 10msec Note: 1. T 2. T = 25°C C = 150°C J 3. Single Pulse |
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Similar Description - IRF13N50 |
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