SEMICONDUCTOR

RoHS

RoHS

Nell High Power Products

UNIT

MIN.

0.34

0.24

THERMAL RESISTANCE

PARAMETER

Thermal resistance, case to heat sink

Thermal resistance, junction to case

SYMBOL

TYP.

MAX.

ºC/W

40

Thermal resistance, junction to ambient

UNIT

V

ns

μA

pF

nC

37

MAX.

250

600

-100

100

0.30

3570

36

26

99

48

350

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

C

I = 250μA,

D

V

= 0V

GS

TEST CONDITIONS

I = 1mA,

D

V

=V

DS

GS

V

=600V, V

=0V

DS

GS

T = 25°C

C

Fall time

Gate to source reverse leakage current

Input capacitance

Total gate charge

Output capacitance

PARAMETER

Rise time

Gate to source forward leakage current

Turn-on delay time

Reverse transfer capacitance

Breakdown voltage temperature coefficient

Drain to source breakdown voltage

Turn-off delay time

SYMBOL

▲

▲

V

/

(BR)DSS

Gate to source charge

Drain to source leakage current

V/ºC

Ω

nA

T =125°C

C

TYP.

MIN.

50

150

V

= 300V,

DD

(Note1,2)

V

= 10V

GS

I = 22A, R = 6.2Ω, R = 3.2Ω

D

G

D

V

= 25V, V

= 0V, f =1MHz

DS

GS

V

= -30V, V

= 0V

GS

DS

V

= 30V, V

= 0V

GS

DS

Forward transconductance

V

= 50V, l = 13A

DS

D

V

=480V, V

=0V

DS

GS

S

STATIC

DYNAMIC

45

V

= 480V,

DD

(Note1,2)

V

= 10V

GS

I = 22A,

D

0.28

Static drain to source on-state resistance

I = 13A, V

= 10V

D

GS

3.0

V

5.0

V

=V

, I =250μA

GS

DS

D

Gate threshold voltage

Gate to drain charge (Miller charge)

Note:

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11

76

IRF22N60 Series

0.24

SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise specified)

C

SYMBOL

PARAMETER

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Diode forward voltage

I

= 22A, V

= 0V

SD

GS

1.5

V

Continuous source to drain current

Integral reverse P-N junction

diode in the MOSFET

22

D (Drain)

G

(Gate)

S (Source)

A

Pulsed source current

88

Reverse recovery time

890

ns

I

= 22A, V

= 0V,

SD

GS

dI /dt = 100A/µs

F

Reverse recovery charge

μC

13

1010

T =25

°C

J

T =125

°C

J

T =25

°C

J

T =125

°C

J

A

11

39

8.5

590

670

7.2

26

Reverse recovery current

Forward turn-on time

Intrinsic turn-on time is negligible (turn-on is dominated by L +L )

S

D