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MJE13003DG-P-D-T92-B Datasheet(PDF) 2 Page - Unisonic Technologies |
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MJE13003DG-P-D-T92-B Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 4 page MJE13003D-P Preliminary NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R201-085.c ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector- Emitter Voltage (VBE =0) VCES 700 V Collector-Emitter Voltage (IB =0) VCEO 400 V Emitter-Base Voltage (IC=0, IB=0.75A, tP<10μS) VEBO 9 V Collector Current IC 1.5 A Collector Peak Current (tP<5ms) ICM 3 A Base Current IB 0.75 A Base Peak Current (tP<5ms) IBM 1.5 A Power Dissipation TA=25°C PD 1.1 W TC=25°C 1.5 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Emitter-Base Breakdown Voltage BVEBO IE =10mA, IC=0 9 18 V Collector-Emitter Sustaining Voltage (Note) VCEO(SUS) IC=10mA, IB=0 450 V Collector Cut-Off Current ICES VCE =700V,VBE =0 1 mA Collector-Emitter Saturation Voltage (Note) VCE(SAT) IC=0.5 A, IB=0.1 A 0.5 V IC=1 A, IB=0.25 A 1 V IC=1.5 A, IB=0.5 A 3 V Base-Emitter Saturation Voltage (Note) VBE(SAT) IC=0.5 A, IB=0.1 A 1 V IC=1 A, IB=0.25 A 1.2 V DC Current Gain hFE1 IC=0.4A, VCE =5 V 14 57 hFE2 IC=1 A, VCE =5 V 5 30 Resistive Load Rise Time tR VCC=125 V, IC=1 A, IB1=0.2 A, IB2=-0.2 A tP=25μs 1 μs Storage Time tS 4 μs Fall Time tF 0.7 μs Inductive Load Storage Time tS IC=1 A, IB1=0.2 A,VBE =-5 V, L=50mH, VCLAMP=300V 0.8 μs Diode Forward Voltage VF IF=0.5 A 1.5 V Note: Pulse Test: Pulse duration≤300μs, Duty cycle≤2 % CLASSIFICATION OF hFE1 RANK A B C D E F G H RANGE 14 ~ 22 21 ~ 27 26 ~ 32 31 ~ 37 36 ~ 42 41 ~ 47 46 ~ 52 51 ~ 57 |
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