MJE13003L-E-D-T92-R datasheet(3/8 Pages) UTC

Part #	MJE13003L-E-D-T92-R

Description	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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3 / 8 page

MJE13003-E

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 8

www.unisonic.com.tw

QW-R223-009.C



ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS (1)

Collector-Emitter Sustaining Voltage

VCEO(SUS) IC=10 mA , IB=0

400

V

Collector Cutoff Current

ICEV

VCEV=Rated Value, VBE(off)=1.5 V

1

mA

VCEV=Rated Value,

VBE(off)=1.5V,Tc=100°C

5mA

SECOND BREAKDOWN

DC Current Gain

hFE1

IC=0.5 A, VCE=2V

8

40

hFE2

IC=1 A, VCE=2V

3

25

hFE3

IC=200mA, VCE=10V

9

40

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=0.5A, IB=0.1A

0.5

V

IC=1A, IB=0.25A

2.5

IC=1.5A, IB=0.5A

3

Base-Emitter Saturation Voltage

V BE(SAT)

IC=0.5A, IB=0.1A

1

V

IC=1A, IB=0.25 A

1.2

DYNAMIC CHARACTERISTICS

Current-Gain-Bandwidth Product

fT

IC=100mA, VCE=10 V, f=1MHz

4

10

MHz

Output Capacitance

Cob

VCB=10V, IE=0, f=0.1MHz

21

pF

SWITCHING CHARACTERISTICS (TABLE 1)

Delay Time

td

VCC=125V, IC=1A,

IB1=IB2=0.2A, tP=25μs,

Duty Cycle≤1%

0.05 0.1

μs

Rise Time

tr

0.5

1

μs

Storage Time

ts

2

4

μs

Fall Time

tf

0.4

0.7

μs

INDUCTIVE LOAD, CLAMPED (TABLE 1, FIGURE 7)

Storage Time

tsv

IC=1A,Vclamp=300V,

IB1=0.2A,VBE(off)=5V,TC=100°C

1.7

4

μs

Crossover Time

tc

0.29 0.75

μs

Fall Time

tfi

0.15

μs



CLASSIFICATION OF hFE1

RANK

A

B

C

D

E

F

RANGE

8 ~ 16

15 ~ 21

20 ~ 26

25 ~ 31

30 ~ 36

35 ~ 40

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