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MJE13003L-H-E-T92-B Datasheet(PDF) 2 Page - Unisonic Technologies |
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MJE13003L-H-E-T92-B Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 8 page MJE13003-H NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 8 www.unisonic.com.tw QW-R223-010.B ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCEO(SUS) 400 V Collector-Base Voltage VCBO 900 V Emitter Base Voltage VEBO 9 V Collector Current Continuous IC 1.5 A Peak (1) ICM 3 Base Current Continuous IB 0.75 A Peak (1) IBM 1.5 Emitter Current Continuous IE 2.25 A Peak (1) IEM 4.5 Power Dissipation TA=25°C TO-126 / TO-126C TO-126S PD 1.4 W TO-92 / TO-92NL 1.1 W TO-220 2 W TO-251 / TO-252 1.56 W TC=25°C TO-126 / TO-126C TO-126S 20 W TO-92 / TO-92NL 1.5 W TO-220 40 W TO-251 / TO-252 25 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. |
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