MJE13005D-K

Preliminary

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R213-021.b



PARAMETER

SYMBOL

RATING

UNIT

700

V

400

V

Emitter-Base Voltage

9

V

Collector Current

DC

4

A

Pulse

8

A

Base Current

DC

2

A

Pulse

4

A

Power Dissipation

44

W

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.



THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

100

°C/W

Junction to Case

2.87

°C/W



ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Emitter Breakdown Voltage

400

V

Collector -Base Breakdown Voltage

700

V

Emitter-Base Breakdown Voltage

9

V

Collect Cut-off Current

100

μA

Collect Cut-off Current

50

μA

Emitter Cut-off Current

10

μA

DC Current Gain

15

50

5

Collector-Emitter Saturation Voltage

0.5

V

0.6

1

1

Base-Emitter Saturation Voltage

1.6

V

Resistive Load

Fall Time

0.7

μs

Storage Time

4

μs

Current Gain Bandwidth Product

4

Diode Forward Voltage

1.5

V



RANK

A

B

C

D

E

RANGE

15 ~ 20

20 ~ 25

25 ~ 30

30 ~ 40

40 ~ 50