BYG20D thru BYG20J

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Vishay General Semiconductor

Revision: 21-Dec-11

3

Document Number: 88958

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 3 - Reverse Current vs. Junction Temperature

Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature

Fig. 5 - Diode Capacitance vs. Reverse Voltage

Fig. 6 - Reverse Recovery Time vs. Forward Current

Fig. 7 - Reverse Recovery Charge vs. Forward Current

Fig. 8 - Thermal Response

1

10

100

25

50

75

100

125

150

Junction Temperature (°C)

V

P

at 100 % V

R

0

10

20

30

40

70

25

50

75

100

125

150

Junction Temperature (°C)

V

P

at 80 % V

R

50

60

0

5

10

15

20

25

30

0.1

1

10

100

f = 1 MHz

Reverse Voltage (V)

0

0.2

0.4

0.6

0.8

0

100

200

300

400

600

1.0

500

I

Forward Current (A)

T

T

T

T

T

0

50

100

150

200

0

0.2

0.4

0.6

0.8

1.0

Forward Current (A)

I

T

T

T

T

T

1

10

100

1000

Pulse Length (s)

Single Pulse

125 K/W DC

t

t

t

t

t

t