UTT200N03

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-758.C



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Drain Current

Continuous

200

A

Pulsed (Note 1)

800

A

Single Pulsed Avalanche Energy (Note 2)

864

mJ

Power Dissipation

178

W

Power Dissipation

Derate above 25°C

1.43

W/°C

Junction Temperature

-55~+150

°C

Storage Temperature

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

0.7

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Drain-Source Leakage Current

10

µA

Gate- Source Leakage Current

Forward

+100

nA

Reverse

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

1.0

3.0

V

Static Drain-Source On-State Resistance

2.6

mΩ

DYNAMIC PARAMETERS

Input Capacitance

5490 7300

pF

Output Capacitance

1220 1620

pF

Reverse Transfer Capacitance

155 233

pF

SWITCHING PARAMETERS

Total Gate Charge

200 350

nC

Gate to Source Charge

11

nC

Gate to Drain Charge

40

nC

Turn-ON Delay Time

70

110

ns

Rise Time

200 300

ns

Turn-OFF Delay Time

1600 2000

ns

Fall-Time

700 1200

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

200

A

Maximum Body-Diode Pulsed Current

800

A

Drain-Source Diode Forward Voltage

1.3

V

Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

3. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

4. Essentially independent of operating temperature