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MSB6N70 Datasheet(PDF) 2 Page - Bruckewell Technology LTD |
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MSB6N70 Datasheet(HTML) 2 Page - Bruckewell Technology LTD |
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2 / 8 page  MSB6N70 700V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2013 Characteristics (Tc=25°C, unless otherwise specified) Symbol Test Conditions Min. Typ. Max. Unit Static Characteristics VGS VDS = VGS, ID=250μA 2.0 - 4.0 V *RDS(ON) VGS =10V,ID =2.8A - 1.5 1.8 mΩ BVDSS VGS=0, ID=250μA 700 - - V ∆BVDSS/∆Tj Reference to 25°C, ID=250μA 0.70 VDS =700V,VGS =0V - - 1 IDSS VDS =560V, VGS =0, Tj=125°C - - 10 uA IGSSF VGS =30V,VDS =0V - - 100 nA IGSSR VGS =-30V,VDS =0V - - -100 nA Dynamic Characteristics Ciss - 1100 1500 Coss - 110 150 Crss VGS=0V, VDS=25V, f=1MHz - 12 16 pF td(ON) - 10 30 tr - 35 80 td(OFF) - 45 100 tf VDS =350V,ID =5.5A, RG = 25 Ω - 40 90 ns Qg - 29 37 nC Qgs - 5 - Qgd VDS =560V,ID =5.5A, VGS =10V - 11 - Source-Drain Diode Characteristics IS - - 5.5 ISM - - 22 A VSD IS = 5.5A, VGS = 0 V - - 1.5 V trr - 390 - nS Qrr IS = 5.5 A, VGS = 0 V diF/dt = 100 A/μs - 3.6 - nC |
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Similar Description - MSB6N70 |
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