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5N25L-TN3-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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5N25L-TN3-R Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 6 page  5N25 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-852.b ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 250 V Breakdown Voltage Temperature Coefficient △ BVDSS △ /TJ Reference to 25°C, ID=250µA 0.18 V/°C Drain-Source Leakage Current IDSS VDS=250V, VGS=0V 1 µA Gate-Source Leakage Current Forward IGSS VGS=+20V, VDS=0V +100 nA Reverse VGS=-20V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2 4 V Static Drain-Source On-State Resistance (Note 1) RDS(ON) VGS=10V, ID=1.9A 0.74 1.2 Ω VGS=5V, ID=1.9A 0.92 1.25 Ω Forward Transconductance gFS VDS=30V, ID=1.9A 3.35 S DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz 250 325 pF Output Capacitance COSS 40 50 pF Reverse Transfer Capacitance CRSS 6 8 pF SWITCHING PARAMETERS Total Gate Charge QG VGS=5V, VDS=160V, ID=4.5A (Note 1, 2) 14 20 nC Gate to Source Charge QGS 1.2 nC Gate to Drain Charge QGD 2.4 nC Turn-ON Delay Time tD(ON) VDD=100V, ID=4.5A, RG=25Ω (Note 1, 2) 28 40 ns Rise Time tR 24 80 ns Turn-OFF Delay Time tD(OFF) 80 110 ns Fall-Time tF 20 90 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 3.8 A Maximum Body-Diode Pulsed Current ISM 9 A Drain-Source Diode Forward Voltage VSD IS=3.8A, VGS=0V 1.5 V Body Diode Reverse Recovery Time tRR IS=4.5A, VGS=0V, dIF/dt=100A/µs (Note 1) 95 ns Body Diode Reverse Recovery Charge QRR 0.3 µC Notes: 1. Pulse Test: Pulse width≤300µs, Duty cycle≤2% 2. Essentially independent of operating temperature |
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