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7N20ZG-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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7N20ZG-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 5 page 7N20Z Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R502-810.A ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain -Source Voltage VDSS 200 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current TC =25°C ID 7 A Pulsed Drain Current (Note 2) IDM 28 A Single Pulsed Avalanche Energy (Note 3) EAS 130 mJ Power Dissipation PD 2.5 W Operating Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note:1. 2. 3. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Repetitive Rating : Pulse width limited by maximum junction temperature L =26mH, IAS =7A, VDD =25V, RG =25Ω Starting TJ =25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 50 °C/W Note: When mounted on the minimum pad size recommended (PCB Mount) ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS =0V, ID =250µA 200 V Drain-Source Leakage Current IDSS VDS =200V, VGS =0V 1 µA Gate-Source Leakage Current IGSS VGS =±25V, VDS =0V ±10 µA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID =250µA 2.0 4.0 V Static Drain-Source On-Resistance RDS(ON) VGS =10V, ID =3.5A 0.58 0.69 Ω DYNAMIC PARAMETERS Input Capacitance CISS VDS =25V, VGS=0V, f=1.0MHz 190 250 pF Output Capacitance COSS 60 75 pF Reverse Transfer Capacitance CRSS 10 13 pF SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=100V, ID=7A (Note 1,2) 5.8 7.5 nC Gate Source Charge QGS 1.4 nC Gate Drain Charge QGD 2.5 nC Turn-ON Delay Time tD(ON) VDD=50V, ID=7A, RG=25Ω (Note 1,2) 7 25 ns Turn-ON Rise Time tR 24 60 ns Turn-OFF Delay Time tD(OFF) 13 35 ns Turn-OFF Fall-Time tF 19 50 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current IS 7 A Maximum Pulsed Drain-Source Diode Forward Current ISM 28 A Drain-Source Diode Forward Voltage VSD IS =7A, VGS =0V 1.5 V Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
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