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IRF4410 Datasheet(PDF) 7 Page - Nell Semiconductor Co., Ltd

Part # IRF4410
Description  N-Channel Power MOSFET
Download  9 Pages
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Manufacturer  NELLSEMI [Nell Semiconductor Co., Ltd]
Direct Link  http://www.nellsemi.com
Logo NELLSEMI - Nell Semiconductor Co., Ltd

IRF4410 Datasheet(HTML) 7 Page - Nell Semiconductor Co., Ltd

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SEMICONDUCTOR
Nell High Power Products
RoHS
RoHS
IRF4410 Series
Fig.20 Typical stored charge vs. di /dt
f
di /dt (A/μs)
f
100
200
300
400
500
600
700
450
400
350
300
250
200
150
100
50
0
•
•
•
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple ≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. I SD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
*
+
-
+
+
+
-
-
-
•
•
•
•
A
Fig.21 Peak diode recovery dv/dt test circuit for N-Channel
Circuit Layout Considerations
Low Stray lnductance
Ground Plane
Low Leakage lnductance
Current Transformer
dv/dt controlled by RG
Driver same type as D.U.T.
l
controlled by Duty Factor D
SD
" "
D.U.T. -Device Under Test
D.U.T.
RG
VDD
*V
= 5V for Logic Level Devices
GS
tp
lAS
+
-
15V
DRIVER
VDD
D.U.T.
VDS
RG
20V
tP
lAS
0.01Ω
L
Fig.22a Unclamped lnductive test circuit
Fig.22b Unclamped inductive waveforms
I = 58A
F
V = 85V
R
T =125°C
J
T =25°C
J
V(BR)DSS
www.nellsemi.com
Page 7 of 9


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