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IRFF30 Datasheet(PDF) 4 Page - Nell Semiconductor Co., Ltd |
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IRFF30 Datasheet(HTML) 4 Page - Nell Semiconductor Co., Ltd |
4 / 7 page SEMICONDUCTOR Nell High Power Products RoHS RoHS www.nellsemi.com Page 4 of 7 Fig.5 Typical capacitance vs. Drain-to-Source voltage Fig.6 Typical source-drain diode forward voltage 0 0.8 0.4 0.6 1.0 0 10 1 10 1000 500 2000 1500 3000 Drain- voltage, V (V) SD Source 0.7 Drain voltage, V (V) SD Source- 1 10 0 10 Fig.7 Typical gate charge vs. gate-to-source voltage Fig.8 Maximum safe operating area Fig.9 Maximum drain current vs. Case temperature 0 40 20 10 2 10 1 2 10 3 10 4 3 2 1 25 50 75 100 125 150 Case temperature, T (°C) C Total gate charge, Q (nC) G 10 1 Drain-source voltage, V (V) DS 0 60 80 0.1 2500 IRFF30 Series C = ( ) iss C +C C shorted gs gd ds C = C +C oss ds gd C = C rss gd V = 0V, f = 1MHz GS Crss Coss Ciss V = 0V GS 25ºC 150ºC V = 360V DS V = 90V DS V = 180V DS 0 4 8 12 16 20 I = 3.6 A D Operation in This Area is Limited by RDS(ON) Note: 1. T 2. T = 25°C C = 150°C J 3. Single Pulse 10µs 100µs 1ms 10ms 4 10 -1 10 0.9 0.5 |
Similar Part No. - IRFF30 |
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Similar Description - IRFF30 |
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