UT4450

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 9

www.unisonic.com.tw

QW-R502-898, C

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PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

40

V

Gate-Source Voltage

±20

V

Drain Current

Continuous

7

A

5.5

A

Pulsed (Note 1)

45

A

Avalanche Current (Note 1)

14

A

Avalanche Energy

L=0.1mH (Note 1)

10

mJ

Power Dissipation (Note 2)

3.1

W

2

W

Junction Temperature

-55~+150

°C

Storage Temperature Range

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient

t ≤10s (Note 3)

31

40

°C/W

Steady-State (Note 3, 4)

59

75

°C/W

3. The device is measured that mounted on 1in