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UT4466L-S08-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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UT4466L-S08-R Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 6 page UT4466 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-863.a ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±25 V Drain Current Continuous(Note 2) TA=25°C ID 10 A TA=85°C 6 A Pulsed (Note 3) IDM 60 A Avalanche Current (Note 3, 4) IAR 16 A Repetitive Avalanche Energy (Note 3, 4) L=0.1mH EAR 12.8 mJ Power Dissipation (Note 2) PD 1.42 W Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Device mounted on FR-4 substrate PC board with minimum recommended pad layout in a still air environment @ TA=25°C. The value in any given application depends on the user's specific board design. 3. Repetitive rating, pulse width limited by junction temperature. 4. IAR and EAR rating are based on low frequency and duty cycles to keep TJ=25°C THERMAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Junction to Ambient (Note 1) θJA 88.4 °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS (Note 1) Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 30 V Drain-Source Leakage Current IDSS VDS=30V, VGS=0V 1 µA Gate-Source Leakage Current Forward IGSS VGS=+25V, VDS=0V +100 nA Reverse VGS=-25V, VDS=0V -100 nA ON CHARACTERISTICS (Note 1) Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 1.0 1.45 2.4 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=10A 15 23 mΩ VGS=4.5V, ID=7.5A 25 33 mΩ Forward Transfer Admittance |YFS| VDS=5V, ID=10A 2.5 S DYNAMIC PARAMETERS (Note 2) Input Capacitance CISS VGS=0V, VDS=15V, f=1.0MHz 478.9 pF Output Capacitance COSS 96.7 pF Reverse Transfer Capacitance CRSS 61.4 pF SWITCHING PARAMETERS Gate Resistance RG VDS=0V, VGS=0V, f=1MHz 0.4 1.1 1.6 Ω Total Gate Charge QG VGS=4.5V, VDS=15V, ID=10A 5.0 8 nC Total Gate Charge QG VGS=10V, VDS=15V, ID=10A 10.5 17 nC Gate to Source Charge QGS 1.8 nC Gate to Drain Charge QGD 1.6 nC Turn-ON Delay Time tD(ON) VDS=15V, VGS=10V, RG=3Ω, RL=1.5Ω 2.9 ns Rise Time tR 7.9 ns Turn-OFF Delay Time tD(OFF) 14.6 ns Fall-Time tF 3.1 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=1A, VGS=0V 0.69 1 V Notes: 1. Short duration pulse test used to minimize self-heating effect. 2. Guaranteed by design. Not subject to production testing. |
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