UT4466

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-863.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±25

V

Drain Current

Continuous(Note 2)

10

A

6

A

Pulsed (Note 3)

60

A

Avalanche Current (Note 3, 4)

16

A

Repetitive Avalanche Energy (Note 3, 4) L=0.1mH

12.8

mJ

Power Dissipation (Note 2)

1.42

W

Junction Temperature

-55~+150

°C

Storage Temperature Range

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Device mounted on FR-4 substrate PC board with minimum recommended pad layout in a still air

3. Repetitive rating, pulse width limited by junction temperature.

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (Note 1)

88.4

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

(Note 1)

Drain-Source Breakdown Voltage

30

V

Drain-Source Leakage Current

1

µA

Gate-Source Leakage Current

Forward

+100 nA

Reverse

-100 nA

ON CHARACTERISTICS

(Note 1)

Gate Threshold Voltage

1.0

1.45

2.4

V

Static Drain-Source On-State Resistance

15

23

mΩ

25

33

mΩ

Forward Transfer Admittance

2.5

S

DYNAMIC PARAMETERS

(Note 2)

Input Capacitance

478.9

pF

Output Capacitance

96.7

pF

Reverse Transfer Capacitance

61.4

pF

SWITCHING PARAMETERS

Gate Resistance

0.4

1.1

1.6

Ω

Total Gate Charge

5.0

8

nC

Total Gate Charge

10.5

17

nC

Gate to Source Charge

1.8

nC

Gate to Drain Charge

1.6

nC

Turn-ON Delay Time

2.9

ns

Rise Time

7.9

ns

Turn-OFF Delay Time

14.6

ns

Fall-Time

3.1

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

0.69

1

V

Notes: 1. Short duration pulse test used to minimize self-heating effect.

2. Guaranteed by design. Not subject to production testing.