UTT120N04G-TQ2-R datasheet(2/3 Pages) UTC

Part #	UTT120N04G-TQ2-R

Description	120A, 40V N-CHANNEL POWER MOSFET

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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UTT120N04

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-793.b

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

40

V

Gate-Source Voltage

VGSS

±20

V

Drain Current

Continuous

ID

120

A

Pulsed

IDM

480

A

Avalanche Energy

Single Pulsed

EAS

541.5

mJ

Power Dissipation

PD

100

W

Junction Temperature

TJ

+150

°C

Storage Temperature Range

TSTG

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

62.5

°C/W

Junction to Case

θJC

1.5

°C/W

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

40

V

Drain-Source Leakage Current

IDSS

VDS=32V

10

µA

Gate-Source Leakage Current

Forward

IGSS

VGS=+20V, VDS=0V

+100 nA

Reverse

VGS=-20V, VDS=0V

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

ID=250µA

1

3

V

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=60A

3.8

mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

VDS=25V, VGS=0V, f=1MHz

2890

pF

Output Capacitance

COSS

575

pF

Reverse Transfer Capacitance

CRSS

310

pF

SWITCHING PARAMETERS

Total Gate Charge

QG

VDD=30V, VGS=10V, ID=1A,

IG=100µA

160 200

nC

Gate to Source Charge

QGS

35

nC

Gate to Drain Charge

QGD

42

60

nC

Turn-ON Delay Time

tD(ON)

VDD=30V, ID=0.5A, RG=25Ω,

VGS=0~10V

17

ns

Rise Time

tR

140

ns

Turn-OFF Delay Time

tD(OFF)

72

ns

Fall-Time

tF

26

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

IS

120

A

Maximum Body-Diode Pulsed Current

ISM

480

A

Drain-Source Diode Forward Voltage

VSD

IS=120A

1.28

V

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