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A1225 Datasheet(PDF) 5 Page - Allegro MicroSystems |
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A1225 Datasheet(HTML) 5 Page - Allegro MicroSystems |
5 / 8 page 3185 THRU 3189 HALL-EFFECT LATCHES FOR HIGH-TEMPERATURE OPERATION 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 ELEMENT LOCATIONS (±0.005” [0.13 mm] die placement) Allegro Package Designators “LT” 1 3 2 Dwg. MH-008-4C 0.0305" 0.775 mm NOM ACTIVE AREA DEPTH 0.050" 1.27 mm 0.090" 2.27 mm A Package Designators “UA” 1 3 2 Dwg. MH-011-4C 0.0195" 0.50 mm NOM BRANDED SURFACE ACTIVE AREA DEPTH 0.083" 2.10 mm 0.060" 1.51 mm A The simplest form of magnet that will operate these devices is a ring magnet, as shown below. Other methods of operation are possible. Dwg. A-11,899 OPERATION In operation, the output transistor is OFF until the strength of the mag- netic field perpendicular to the surface of the chip exceeds the threshold or operate point (BOP). When the field strength exceeds BOP, the output transis- tor switches ON and is capable of sinking 25 mA of current. The output transistor switches OFF when magnetic field reversal results in a magnetic flux density below the OFF threshold (BRP). This is illustrated in the transfer characteristics graph (A3187* shown). Note that the device latches; that is, a south pole of sufficient strength will turn the device ON. Removal of the south pole will leave the device ON. The presence of a north pole of sufficient strength is required to turn the device OFF. Powering up in the absence of a magnetic field (less than BOP and higher than BRP) will allow an indeterminate output state. The correct state is warranted after the first excursion beyond BOP or BRP. APPLICATIONS INFORMATION Extensive applications information on magnets and Hall-effect devices is also available in the Allegro Integrated and Discrete Semiconductors Data Book or Application Note 27701. 30 V MAX B + 0 0 FLUX DENSITY Dwg. GH-034-4 -B RP B VOUT(SAT) BB V OP B Although element location is accurate to three sigma for a particular design, product improve- ments may result in small changes to element location. |
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