MTN2402KN3 datasheet(4/8 Pages) CYSTEKEC

Part #	MTN2402KN3

Description	20V N-Channel Enhancement Mode MOSFET

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Manufacturer	CYSTEKEC [Cystech Electonics Corp.]

Direct Link	http://www.cystekec.com

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4 / 8 page

CYStech Electronics Corp.

Spec. No. : C837N3

Issued Date : 2012.09.13

Revised Date :

Page No. : 4/8

MTN2402KN3

CYStek Product Specification

Typical Characteristics(Cont.)

Capacitance vs Drain-to-Source Voltage

10

100

1000

0.1

1

10

100

VDS, Drain-Source Voltage(V)

C oss

Ciss

Crss

Threshold Voltage vs Junction Tempearture

0.4

0.6

0.8

1

1.2

1.4

1.6

-60 -40 -20

0

20 40

60 80 100 120 140 160

Tj, Junction Temperature(°C)

ID=250μA

Forward Transfer Admittance vs Drain Current

0.01

0.1

1

10

0.001

0.01

0.1

1

ID, Drain Current(A)

VDS=10V

Pulsed

Ta=25°C

Gate Charge Characteristics

0

1

2

3

4

5

01

2

3

Qg, Total Gate Charge(nC)

4

VDS=16V

ID=2A

Maximum Safe Operating Area

0.01

0.1

1

10

0.01

0.1

1

10

100

VDS, Drain-Source Voltage(V)

DC

10ms

100ms

1ms

100μs

1s

TA=25°C, Tj=150°C,

VGS=4.5V, RθJA=100°C/W

Single Pulse

RDS(ON)

Limited

Maximum Drain Current vs JunctionTemperature

0

0.5

1

1.5

2

2.5

25

50

75

100

125

150

175

Tj, Junction Temperature(°C)

TA=25°C, VGS=4.5V, RθJA=100°C/W

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MTN2402KN3 Datasheet(PDF) 4 Page - Cystech Electonics Corp.

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