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MTN2402KN3 Datasheet(PDF) 4 Page - Cystech Electonics Corp. |
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MTN2402KN3 Datasheet(HTML) 4 Page - Cystech Electonics Corp. |
4 / 8 page CYStech Electronics Corp. Spec. No. : C837N3 Issued Date : 2012.09.13 Revised Date : Page No. : 4/8 MTN2402KN3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 10 100 1000 0.1 1 10 100 VDS, Drain-Source Voltage(V) C oss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) ID=250μA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 0.001 0.01 0.1 1 ID, Drain Current(A) VDS=10V Pulsed Ta=25°C Gate Charge Characteristics 0 1 2 3 4 5 01 2 3 Qg, Total Gate Charge(nC) 4 VDS=16V ID=2A Maximum Safe Operating Area 0.01 0.1 1 10 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) DC 10ms 100ms 1ms 100μs 1s TA=25°C, Tj=150°C, VGS=4.5V, RθJA=100°C/W Single Pulse RDS(ON) Limited Maximum Drain Current vs JunctionTemperature 0 0.5 1 1.5 2 2.5 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) TA=25°C, VGS=4.5V, RθJA=100°C/W |
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