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AN80L32RMS Datasheet(PDF) 6 Page - Panasonic Semiconductor |
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AN80L32RMS Datasheet(HTML) 6 Page - Panasonic Semiconductor |
6 / 27 page AN80LxxRMS Series 6 SFF00008DEB Parameter Symbol Conditions Min Typ Max Unit Output voltage VOUT VIN = 3.0 V, IOUT = 50 mA 1.940 2.0 2.060 V Line regulation 1 REGIN1 VIN = 3.0 V → 14.5 V, IOUT = 50 mA 10 50 mV Line regulation 2 REGIN2 VIN = 3.0 V → 9 V, IOUT = 50 mA 520 mV Load regulation * 1 REGLOA VIN = 3.0 V, IOUT = 0 mA → 150 mA 50 150 mV Peak output current * 2 IPEAK VIN = 3.0 V, The output current value 180 240 mA when VOUT decreases by 5% from its value at IOUT = 50 mA. Bias current under no load IBIAS VIN = 3.0 V, IOUT = 0 mA 350 µA Bias current fluctuation to load ∆I BIAS VIN = 3.0 V, IOUT = 0 mA → 150 mA 5mA Standby consumption current ISTB VIN = 10 V, VCONT = 0 V 0.1 µA Bias current before starting IRUSH VIN = 1.7 V, IOUT = 0 mA 1.5 5 mA regulation Ripple rejection ratio RR 1 V[rms], f = 120 Hz, I OUT = 10 mA 62 70 dB Minimum input/ VDIF(min)1 VIN = 1.7 V, IOUT = 0 mA 0.1 0.2 V output voltage difference 1 Minimum input/ VDIF(min)2 VIN = 2.3 V, IOUT = 150 mA 0.4 V output voltage difference 2 Control terminal threshold high voltage VCONTH VIN = 3.0 V, IOUT = 50 mA 1.50 V Control terminal threshold low voltage VCONTL VIN = 3.0 V, IOUT = 50 mA 0.30 V Control terminal current ICONT VIN = 3.0 V, IOUT = 50 mA 30 µA VCONT = 1.8 V Parameter Symbol Conditions Min Typ Max Unit Output noise voltage VNO 10 Hz ≤ f ≤ 100 kHz, I OUT = 10 mA 42 µV Output voltage tempera- 1 · dVOUT VIN = 3.0 V, IOUT = 0 mA 90 ppm/ °C ture coefficient VOUT dT −30°C ≤ T a ≤ +85°C Output rise time * tON VIN = 3.0 V, IOUT = 50 mA 0.10 ms VCONT = 0 V → 1.8 V, CIN = 0.1 µF COUT = 10 µF, VOUT = 90% Note) *: Refer to "s Application Notes 3. Output rise-time characteristics". Note) *1: 1.0 Ω *2: Peak output current: The output current when the output voltage has been decreased by 5% from the value at the time when the output current is 50 mA due to the overcurrent protection. s Electrical Characteristics at Ta = 25°C (continued) • AN80L20RMS (2.0 V type) Unless otherwise specially provided, shorten each test time (within 10 ms) so that the test is conducted under the condition that the drift due to the temperature increase in the chip junction part can be neglected. CIN = 0.1 µF, COUT = 10 µF • Design reference data Note) The following values are typical and not guaranteed values. |
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