MGBR10L40

Preliminary

DIODE

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R601-202.a



Single phase, half wave, 60Hz, resistive or inductive load.

For capacitance load,derate current by 20%.

PARAMETER

SYMBOL

RATINGS

UNIT

DC Blocking Voltage

40

V

WorkingPeak Reverse Voltage

40

V

Peak Repetitive Reverse Voltage

40

V

Average Rectified Output Current

10

A

Non-Repetitive Peak Forward Surge Current 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

150

A

Repetitive Peak Avalanche Power (1μs, 25°C)

5000

W

Operating Junction Temperature

-65~+150

°C

Storage Temperature

-65~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS (Note 3)

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

73

°C/W

Junction to Case

13

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Reverse Breakdown Voltage (Note 1)

40

V

Forward Voltage Drop

0.57

V

0.52

V

Leakage Current (Note 1)

80

300

μA

12

40

mA

Notes: 1. Short duration pulse test used to minimize self-heating effect.

2. Thermal resistance junction to case mounted on heatsink.

3. Mounted on an FR4 PCB, single-sided copper, with 100 cm