IRFS3207PBF datasheet(2/12 Pages) IRF

Part #	IRFS3207PBF

Description	High Efficiency Synchronous Rectification in SMPS

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Manufacturer	IRF [International Rectifier]

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IRF/B/S/SL3207PbF

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Notes:

Calculated continuous current based on maximum allowable junction

temperature. Package limitation current is 75A.

Repetitive rating; pulse width limited by max. junction

temperature.

Limited by TJmax, starting TJ = 25°C, L = 0.33mH

RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use

above this value.

I

SD ≤ 75A, di/dt ≤ 500A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

S

D

G

Coss eff. (TR) is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as

Coss while VDS is rising from 0 to 80% VDSS.

When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended

footprint and soldering techniques refer to application note #AN-994.

Rθ is measured at TJ approximately 90°C.

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

75

–––

V

∆V

(BR)DSS/∆TJ

Breakdown Voltage Temp. Coefficient

–––

0.069

–––

V/°C

RDS(on)

Static Drain-to-Source On-Resistance

–––

3.6

4.5

m

Ω

VGS(th)

Gate Threshold Voltage

2.0

–––

4.0

V

IDSS

Drain-to-Source Leakage Current

–––

20

µA

–––

250

IGSS

Gate-to-Source Forward Leakage

–––

200

nA

Gate-to-Source Reverse Leakage

–––

-200

RG

Gate Input Resistance

–––

1.2

–––

Ω

f = 1MHz, open drain

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

gfs

Forward Transconductance

150

–––

S

Qg

Total Gate Charge

–––

180

260

nC

Qgs

Gate-to-Source Charge

–––

48

–––

Qgd

Gate-to-Drain ("Miller") Charge

–––

68

–––

td(on)

Turn-On Delay Time

–––

29

–––

ns

tr

Rise Time

–––

120

–––

td(off)

Turn-Off Delay Time

–––

68

–––

tf

Fall Time

–––

74

–––

C

iss

Input Capacitance

–––

7600

–––

pF

C

oss

Output Capacitance

–––

710

–––

C

rss

Reverse Transfer Capacitance

–––

390

–––

C

oss eff. (ER)

Effective Output Capacitance (Energy Related)

iÃ–––

920

–––

C

oss eff. (TR)

Effective Output Capacitance (Time Related)

h

–––

1010

–––

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

IS

Continuous Source Current

–––

170

A

(Body Diode)

ISM

Pulsed Source Current

–––

720

(Body Diode)

Ãdi

VSD

Diode Forward Voltage

–––

1.3

V

trr

Reverse Recovery Time

–––

42

63

ns

TJ = 25°C

VR = 64V,

–––

49

74

TJ = 125°C

IF = 75A

Qrr

Reverse Recovery Charge

–––

65

98

nC

TJ = 25°C

di/dt = 100A/µs

g

–––

92

140

TJ = 125°C

IRRM

Reverse Recovery Current

–––

2.6

–––

A

TJ = 25°C

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

I

D = 75A

R

G = 2.6Ω

V

GS = 10V g

V

DD = 48V

T

J = 25°C, IS = 75A, VGS = 0V g

integral reverse

p-n junction diode.

Conditions

V

GS = 0V, ID = 250µA

Reference to 25°C, I

D = 1mAd

V

GS = 10V, ID = 75A g

V

DS = VGS, ID = 250µA

V

DS = 75V, VGS = 0V

V

DS = 75V, VGS = 0V, TJ = 125°C

MOSFET symbol

showing the

V

DS = 60V

Conditions

V

GS = 10V g

VGS = 0V

VDS = 50V

ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 60V j, See Fig.11

VGS = 0V, VDS = 0V to 60V h, See Fig. 5

Conditions

V

DS = 50V, ID = 75A

I

D = 75A

V

GS = 20V

V

GS = -20V

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