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IXTH16N50D2 Datasheet(PDF) 4 Page - IXYS Corporation

Part # IXTH16N50D2
Description  Depletion Mode MOSFETs
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTH16N50D2 Datasheet(HTML) 4 Page - IXYS Corporation

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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH16N50D2
IXTT16N50D2
Fig. 7. Normalized RDS(on) vs. Junction Temperature
0.5
1.0
1.5
2.0
2.5
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
VGS = 0V
I D = 8A
Fig. 8. RDS(on) Normalized to ID = 8A Value
vs. Drain Current
0
0.5
1
1.5
2
2.5
3
3.5
4
0
5
10
15
20
25
30
35
40
45
50
ID - Amperes
VGS = 0V
5V - - - -
TJ = 125ºC
TJ = 25ºC
Fig. 9. Input Admittance
0
10
20
30
40
50
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
VGS - Volts
TJ = 125ºC
25ºC
- 40ºC
VDS = 30V
Fig. 10. Transconductance
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
40
45
50
ID - Amperes
TJ = - 40ºC, 25ºC, 125ºC
VDS = 30V
Fig. 12. Forward Voltage Drop of Intrinsic Diode
0
5
10
15
20
25
30
0.3
0.4
0.5
0.6
0.7
0.8
0.9
VSD - Volts
TJ = 125ºC
VGS = -10V
TJ = 25ºC
Fig. 11. Breakdown and Threshold Voltages
vs. Junction Temperature
0.8
0.9
1.0
1.1
1.2
1.3
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
VGS(off) @ VDS = 25V
BVDSX @ VGS = - 5V


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