MTN6515J3-K datasheet(2/9 Pages) CYSTEKEC

Part #	MTN6515J3-K

Description	N -Channel Logic Level Enhancement Mode Power MOSFET

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Manufacturer	CYSTEKEC [Cystech Electonics Corp.]

Direct Link	http://www.cystekec.com

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CYStech Electronics Corp.

Spec. No. : C739J3

Issued Date : 2009.10.19

Revised Date : 2012.11.27

Page No. : 2/9

MTN6515J3

CYStek Product Specification

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction-to-case, max

Rth,j-c

2.5

°C/W

Thermal Resistance, Junction-to-ambient, max

Rth,j-a

100

°C/W

Characteristics (Tc=25

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

VGS(th)

0.45

0.8

1.20

V

VDS =VGS, ID=250μA

IGSS

-

±

100

nA

VGS=±12, VDS=0

-

1

VDS =120V, VGS =0

IDSS

-

25

μA

VDS =100V, VGS =0, TJ=125

°C

-

60

75

VGS =10V, ID=15A

-

59

75

VGS =5V, ID=10A

RDS(ON) *1

-

60

75

mΩ

VGS =3V, ID=3A

GFS *1

-

48

-

S

VDS =5V, ID=10A

Dynamic

Qg *1, 2

-

30

-

Qgs *1, 2

-

4.8

-

Qgd *1, 2

-

16

-

nC

ID=10A, VDS=80V, VGS=5V

td(ON) *1, 2

-

23

-

tr

*1, 2

-

22

-

td(OFF) *1, 2

-

91

-

tf *1, 2

-

63

-

ns

VDS=75V, ID=1A, VGS=4.5V, RG=6Ω

Ciss

-

2282

-

Coss

-

120

-

Crss

-

66

-

pF

VGS=0V, VDS=25V, f=1MHz

Source-Drain Diode

IS *1

-

20

ISM *3

-

60

A

VSD *1

-

0.85

1.3

V

IF=IS, VGS=0V

trr

-

50

-

ns

Qrr

-

120

-

nC

IF=20A, dIF/dt=100A/μs

Note : *1.Pulse Test : Pulse Width

≤300μs, Duty Cycle≤2%

*2.Independent of operating temperature

*3.Pulse width limited by maximum junction temperature.

Ordering Information

Device

Package

Shipping

Marking

MTN6515J3

TO-252

(Pb-free lead plating package)

2500 pcs / Tape & Reel

N6515

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