CYStech Electronics Corp.

Spec. No. : C925Q8

Issued Date : 2014.02.27

Revised Date :

Page No. : 2/9

MTN7478Q8

CYStek Product Specification

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

60

Gate-Source Voltage

±20

V

°C

7

°C

4.4

Pulsed Drain Current

30 *1

Avalanche Current

7

A

15

Repetitive Avalanche Energy @ L=0.05mH

0.3 *2

mJ

2.5

*3

Total Power Dissipation

1

W

Operating Junction and Storage Temperature Range

Tj, Tstg

-55~+150

°C

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction-to-case, max

25

°C/W

Thermal Resistance, Junction-to-ambient, max

50 *3

°C/W

Note : 1. Pulse width limited by maximum junction temperature

2. Duty cycle≤1%

3. Surface mounted on 1 in² copper pad of FR-4 board, 125

°C/W when mounted on minimum copper pad

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

60

-

-

V

1.0

1.6

2.5

V

-

20

-

S

-

-

±

100

nA

-

-

1

-

-

25

μA

°C

-

14

20

mΩ

-

16

25

mΩ

Dynamic

Ciss

-

2815

-

Coss

-

104

-

Crss

-

85

-

pF