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MTP3LP01S3-0-T1-G Datasheet(PDF) 4 Page - Cystech Electonics Corp. |
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MTP3LP01S3-0-T1-G Datasheet(HTML) 4 Page - Cystech Electonics Corp. |
4 / 9 page CYStech Electronics Corp. Spec. No. : 794N3 Issued Date : 2011.03.14 Revised Date : 2013.09.09 Page No. : 4/ 9 MTP3LP01S3 CYStek Product Specification Typical Characteristics(Cont.) Static Drain-Source On-State resistance vs Drain Current 1 10 1 10 100 1000 Drain Current-ID(mA) TA=125°C TA=75°C TA=25°C VGS=4V Static Drain-Source On-State resistance vs Ambient Temperature 0 2 4 6 8 10 0 50 100 150 Ambient Temperature-TA(°C) ID=50mA, VGS=4V ID=30mA, VGS=2.5V Reverse Drain Current vs Source-Drain Voltage 0 0.2 0.4 0.6 0.8 1 1.2 0.1 1 10 100 1000 Reverse Drain Current -IDR(mA) TA=125°C TA=25°C TA=75°C VGS=0V Capacitance vs Drain-to-Source Voltage 1 10 100 0 5 10 15 20 25 30 Drain-Source Voltage -VDS(V) C oss Ciss Crss f=1MHz Forward Transfer Admittance vs Drain Current 10 100 1000 10 100 1000 Drain Current-ID(mA) TA=125°C TA=25°C TA=75°C Brekdown Voltage vs Ambient Temperature 30 35 40 45 -100 -50 0 50 100 150 200 Ambient Temperature-Tj(°C) ID=250μA, VGS=0V |
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