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MTP452M3 Datasheet(PDF) 1 Page - Cystech Electonics Corp. |
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MTP452M3 Datasheet(HTML) 1 Page - Cystech Electonics Corp. |
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1 / 8 page  CYStech Electronics Corp. Spec. No. : C426M3 Issued Date : 2012.02.07 Revised Date : Page No. : 1/8 MTP452M3 CYStek Product Specification 30V P-CHANNEL Enhancement Mode MOSFET MTP452M3 Features • Single Drive Requirement • Low On-resistance, RDS(ON)=50mΩ(typ.)@VGS=-10V, ID=-3.2A RDS(ON)=72mΩ(typ.)@VGS=-4.5V, ID=-2.6A • Ultra High Speed Switching • Pb-free package Symbol Outline MTP452M3 SOT-89 D G D S G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25 °C) Parameter Symbol Limits Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current @ TA=25 °C ID -5.3 A Continuous Drain Current @ TA=70 °C ID -4.2 A Pulsed Drain Current IDM -20 *1, 3 A Total Power Dissipation (TA=25℃) 2 *2 PD W Total Power Dissipation (TA=70℃) 1.3 *2 Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Note : *1 . Pulse width limited by maximum junction temperature *2. Surface mounted on 1 in² copper pad of FR-4 board; 270 °C/W when mounted on min. copper pad *3. Pulse width≤300μs, duty cycle≤2% |
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