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MTP1406M3 Datasheet(PDF) 1 Page - Cystech Electonics Corp. |
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MTP1406M3 Datasheet(HTML) 1 Page - Cystech Electonics Corp. |
1 / 5 page CYStech Electronics Corp. Spec. No. : C733M3 Issued Date : 2011.05.16 Revised Date : 2013.08.12 Page No. : 1/5 MTP1406M3 CYStek Product Specification P-Channel Logic Level Enhancement Mode MOSFET BVDSS -60V ID -4A RDSON(MAX) 90.8mΩ MTP1406M3 Features • Single Drive Requirement • Low On-resistance, RDS(ON)=90.8mΩ@VGS=-10V, ID=-4A • Ultra High Speed Switching • Pb-free lead plated package Symbol Outline Absolute Maximum Ratings (Ta=25 °C) Parameter Symbol Limits Unit Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ± 20 V Continuous Drain Current @ TC=25 °C ID -4 Continuous Drain Current @ TC=100 °C ID -2.4 Pulsed Drain Current *1 IDM -16 A Total Power Dissipation @TA=25℃ 1.67 Total Power Dissipation @TA=100℃ Pd 0.83 W Operating Junction and Storage Temperature Tj, Tstg -55~+175 °C Note : *1 . Pulse width limited by maximum junction temperature *2. Duty cycle≤1% MTP1406M3 SOT-89 G:Gate D G D S S:Source D:Drain |
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