MTP2402Q8 datasheet(2/8 Pages) CYSTEKEC

Part #	MTP2402Q8

Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Manufacturer	CYSTEKEC [Cystech Electonics Corp.]

Direct Link	http://www.cystekec.com

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2 / 8 page

CYStech Electronics Corp.

Spec. No. : C566Q8

Issued Date : 2012.06.12

Revised Date :

Page No. : 2/8

MTP2402Q8

CYStek Product Specification

Absolute Maximum Ratings (Ta=25

°C)

Parameter

Symbol

Limits

Unit

Drain-Source Breakdown Voltage

BVDSS

-20

Gate-Source Voltage

VGS

±12

V

TA=25°C, VGS=-4.5V

-8.3

Continuous Drain Current (Note 1)

TA=70°C, VGS=-4.5V

ID

-6.6

Pulsed Drain Current (Note 2)

IDM

-30

A

TA=25°C

3.1

Total Power Dissipation (Note 1)

TA=70°C

PD

2

W

Operating Junction and Storage Temperature Range

Tj ; Tstg

-55~+150

°C

Thermal Resistance, Junction-to-Ambient (Note 1)

Rth,j-a

40

°C/W

Note : 1.Surface mounted on FR-4 board, t

≤10sec; 125°C/W when mounted on minimum copper pad.

The value in any given application depends on the user’s specific board design.

2.

Pulse width

≤300μs, Duty Cycle≤2%

Electrical Characteristics

(Tj=25

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

-20

-

V

VGS=0, ID=-250μA

VGS(th)

-0.5

-0.7

-1.0

V

VDS=VGS, ID=-250μA

IGSS

-

±100

nA

VGS=±12V, VDS=0

-

-1

VDS=-16V, VGS=0

IDSS

-

-25

μA

VDS=-16V, VGS=0, Tj=125°C

-

22

30

VGS=-10V, ID=-7A

-

27

35

VGS=-4.5V, ID=-4.5A

*RDS(ON)

-

35

50

m

Ω

VGS=-2.5V, ID=-2A

*GFS

-

13

-

S

VDS=-10V, ID=-7A

Dynamic

Ciss

-

1916

-

Coss

-

159

-

Crss

-

132

-

pF

VDS=-10V, VGS=0, f=1MHz

*td(ON)

-

11

-

*tr

-

15

-

*td(OFF)

-

44

-

*tf

-

18

-

ns

VDD=-10V, ID=-2A, VGS=-10V, RG=3.3Ω

*Qg

-

15

-

*Qgs

-

3

-

*Qgd

-

6.3

-

nC

VDS=-16V, VGS=-4.5V, ID=-7A

Source Drain Diode

*IS

-

-2

*ISM

-

-8

A

*VSD

-

-0.76

-1.2

V

VGS=0V, IS=-2A

*trr

-

22

-

ns

*Qrr

-

20

-

nC

IF=7A, dIF/dt=100A/μs

*Pulse Test : Pulse Width

≤300μs, Duty Cycle≤2%

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