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DS1210 Datasheet(PDF) 5 Page - Dallas Semiconductor |
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DS1210 Datasheet(HTML) 5 Page - Dallas Semiconductor |
5 / 6 page DS1210 5 of 6 CAPACITANCE (TA = 25°C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Input Capacitance CIN 5pF Output Capacitance COUT 7pF (0°C to 70°C; VCCI = 4.75V to 5.5V, PIN 3 = GND) AC ELECTRICAL CHARACTERISTICS (VCCI = 4.75V to 5.5V, PIN 3 = GND) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES CE Propagation Delay tPD 510 20 ns 5 CE High to Power-Fail tPF 0ns (0°C to 70°C; VCCI = 4.75V, PIN 3 = GND; VCCI < 4.5, PIN 3 = VCCO) Recovery at Power Up tREC 2 80 125 ms VCC Slew Rate Power-Down tF 300 µs VCC Slew Rate Power-Down tFB 10 µs VCC Slew Rate Power-Down tR 0µs CE Pulse Width tCE 1.5 µs 8 NOTES: 1. All voltages are referenced to ground. 2. Only one battery input is required. Unused battery inputs must be grounded. 3. Measured with VCCO and CEO open. 4. ICC01 is the maximum average load which the DS1210 can supply to the memories. 5. Measured with a load as shown in Figure 2. 6. ICC02 is the maximum average load current which the DS1210 can supply to the memories in the battery backup mode. 7. tCE max. must be met to ensure data integrity on power loss. 8. CEO can only sustain leakage current in the battery backup mode. |
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