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DS1210 Datasheet(PDF) 5 Page - Dallas Semiconductor

Part # DS1210
Description  Nonvolatile Controller Chip
Download  6 Pages
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Manufacturer  DALLAS [Dallas Semiconductor]
Direct Link  https://www.maximintegrated.com/en.html
Logo DALLAS - Dallas Semiconductor

DS1210 Datasheet(HTML) 5 Page - Dallas Semiconductor

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DS1210
5 of 6
CAPACITANCE
(TA = 25°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Input Capacitance
CIN
5pF
Output Capacitance
COUT
7pF
(0°C to 70°C; VCCI = 4.75V to 5.5V, PIN 3 = GND)
AC ELECTRICAL CHARACTERISTICS
(VCCI = 4.75V to 5.5V, PIN 3 = GND)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
CE
Propagation Delay
tPD
510
20
ns
5
CE
High to Power-Fail
tPF
0ns
(0°C to 70°C; VCCI = 4.75V, PIN 3 = GND; VCCI < 4.5, PIN 3 = VCCO)
Recovery at Power Up
tREC
2
80
125
ms
VCC Slew Rate Power-Down
tF
300
µs
VCC Slew Rate Power-Down
tFB
10
µs
VCC Slew Rate Power-Down
tR
0µs
CE
Pulse Width
tCE
1.5
µs
8
NOTES:
1. All voltages are referenced to ground.
2. Only one battery input is required. Unused battery inputs must be grounded.
3. Measured with VCCO and CEO open.
4. ICC01 is the maximum average load which the DS1210 can supply to the memories.
5. Measured with a load as shown in Figure 2.
6. ICC02 is the maximum average load current which the DS1210 can supply to the memories in the
battery backup mode.
7. tCE max. must be met to ensure data integrity on power loss.
8. CEO can only sustain leakage current in the battery backup mode.


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