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DS1217M Datasheet(PDF) 7 Page - Dallas Semiconductor |
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DS1217M Datasheet(HTML) 7 Page - Dallas Semiconductor |
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7 / 8 page  DS1217M 030598 7/8 POWER-DOWN/POWER-UP CONDITION 3.2V CE VCC tF tPD tR tREC tDR LEAKAGE CURRENT IL SUPPLIED FROM LITHIUM CELL DATA RETENTION TIME 4.50V POWER-DOWN/POWER-UP TIMING (0 ° to 70°C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES CE at VIH before Power-Down tPD 0 µs 10 VCC slew from 4.5V to 0V (CE at VIH) tF 100 µs VCC slew from 0V to 4.5V (CE at VIH) tR 0 µs CE at VIH after Power-Up tREC 2 125 ms 10 (tA=25°C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Expected Data Retention Time tDR 5 years 9 WARNING: Under no circumstances are negative undershoots, of any amplitude, allowed when device is in battery backup mode. |
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